| The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc HK Kaplan, S Sarsıcı, SK Akay, M Ahmetoglu Journal of Alloys and Compounds 724, 543-548, 2017 | 21 | 2017 |
| Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells EV Kunitsyna, IA Andreev, VV Sherstnev, TV L’vova, MP Mikhailova, ... Optical Materials 32 (12), 1573-1577, 2010 | 19 | 2010 |
| Determination of the parameters for the back-to-back switched Schottky barrier structures M Ahmetoglu, SK Akay Current Applied Physics 10 (2), 652-654, 2010 | 15 | 2010 |
| Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method HK Kaplan, SK Akay, M Ahmetoglu Superlattices and Microstructures 120, 402-409, 2018 | 13 | 2018 |
| The electrical properties of Au/P3HT/n-GaAs Schottky barrier diode A Kırsoy, M Ahmetoglu, A Asimov, B Kucur Acta Physica Polonica A 128 (2B), 2015 | 12 | 2015 |
| A ZnS–Si isotype heterojunction avalanche photodiode structure for scintillation light detection I Tapan, MA Ahmetoglu, F Kocak Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006 | 11 | 2006 |
| A novel self-powered filterless narrow-band near-infrared photodiode of Cu2S/Si p+-p isotype heterojunction device with very low visible light noise HK Kaplan, SK Akay, M Ahmetoğlu Applied Surface Science 601, 154217, 2022 | 10 | 2022 |
| Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application M Ahmetoglu, B Kucur, IA Andreev, EV Kunitsyna, MP Mikhailova, ... Infrared physics & technology 53 (5), 399-403, 2010 | 9 | 2010 |
| Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb M Ahmetoglu Thin Solid Films 516 (6), 1227-1231, 2008 | 9 | 2008 |
| TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si (100) SCHOTTKY BARRIER DIODES K Erturk, MC Haciismailoglu, Y Bektore, M Ahmetoglu International Journal of Modern Physics B 22 (14), 2309-2319, 2008 | 6 | 2008 |
| Electrical and optical properties of Schottky diodes fabricated by electrodeposition of Ni films on n-GaAs MC Haciismailoglu, M Ahmetoglu, M Haciismailoglu, M Alper, T Batmaz Sensors and Actuators A: Physical 347, 113931, 2022 | 5 | 2022 |
| Electrical properties of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb type-II heterojunctions MA Ahmetoglu, IA Andreev, EV Kunitsyna, MP Mikhailova, YP Yakovlev Semiconductors 41, 150-154, 2007 | 5 | 2007 |
| Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode A Kırsoy, M Ahmetoglu, M Okutan, F Yakuphanoglu Journal of Nanoelectronics and Optoelectronics 11 (1), 108-114, 2016 | 4 | 2016 |
| The electrical characterization of electrodeposited Ni thin film on silicon: Schottky Barrier diodes M Ahmetoglu, A Tekgul, M Alper, B Kucur Optoelectronics and Advanced Materials-Rapid Communications 6 (1-2), 304-306, 2012 | 4 | 2012 |
| Electrical properties of Poly (ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diodes formed by surface polymerization of Single … M Ahmetoglu, A Kara, N Tekin, S Beyaz, H Köçkar Thin solid films 520 (6), 2106-2109, 2012 | 4 | 2012 |
| Change in the resistance of the semiconductor in the variable deformation field M Ahmetoglu, G Gulyamov, SH Shamirzaev, AG Gulyamov, ... ROMANIAN JOURNAL OF PHYSICS 52 (3/4), 343, 2007 | 4 | 2007 |
| Poly (ethylene glycol dimethacrylate-co-1-vinyl-1, 2, 4-triazole/carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization M Ahmetoglu, A Kara, B Kucur Acta Physica Polonica A 130 (1), 206-208, 2016 | 3 | 2016 |
| Electrical and Optical Characteristics of n-GaSb//n-GaIn_0.24AsSb//p-GaAl_0.34AsSb Heterostructure Photodiode M Ahmetoglu, B Kucur, I Andreev, E Kunitsyna, M Mikhailova, Y Yakovlev Acta Physica Polonica A 127 (4), 1007-1009, 2015 | 3 | 2015 |
| Gaussian distribution of inhomogeneous barrier height in Au/n-GaP (100) Schottky barrier diodes M Özer, T Güzel, A Asimov, M Ahmetoglu Journal of Optoelectronics and Advanced Materials 16 (May-June 2014), 606-611, 2014 | 3 | 2014 |
| Electrical and optical characteristics of the InAs/InAs0. 7Sb0. 1P0. 2 single heterojunction photodiodes for the spectral range 1.6–3.5 μm M Ahmetoglu, IA Andreev, EV Kunitsyna, KD Moiseev, MP Mikhailova, ... Infrared Physics & Technology 55 (1), 15-18, 2012 | 3 | 2012 |
