| Enhanced absorption of graphene with one-dimensional photonic crystal JT Liu, NH Liu, J Li, X Jing Li, JH Huang Applied Physics Letters 101 (5), 2012 | 269 | 2012 |
| Electric field driven quantum phase transition between band insulator and topological insulator J Li, K Chang Applied Physics Letters 95 (22), 2009 | 62 | 2009 |
| Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node J Yao, J Li, K Luo, J Yu, Q Zhang, Z Hou, J Gu, W Yang, Z Wu, H Yin, ... IEEE Journal of the Electron Devices Society 6, 841-848, 2018 | 48 | 2018 |
| Spin states in InAs/AlSb/GaSb semiconductor quantum wells J Li, W Yang, K Chang Physical Review B 80 (3), 035303, 2009 | 43 | 2009 |
| Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications QH Lu, R Huang, LS Wang, ZG Wu, C Li, Q Luo, SY Zuo, J Li, DL Peng, ... Journal of Magnetism and Magnetic Materials 394, 253-259, 2015 | 34 | 2015 |
| Charge pumping in monolayer graphene driven by a series of time-periodic potentials Z Wu, J Li, KS Chan Physics Letters A 376 (12-13), 1159-1165, 2012 | 20 | 2012 |
| Anomalous Rashba spin-orbit interaction in InAs∕ GaSb quantum wells J Li, K Chang, GQ Hai, KS Chan Applied Physics Letters 92 (15), 2008 | 19 | 2008 |
| Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU (2) symmetry J Li, K Chang Physical Review B 82 (3), 033304, 2010 | 18 | 2010 |
| The persistent charge and spin currents in topological insulator Bi2Se3 nanowires WK Lou, F Cheng, J Li Journal of Applied Physics 110 (9), 2011 | 17 | 2011 |
| Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime J Li, W Yang, JT Liu, W Huang, C Li, SY Chen Physical Review B 95 (3), 035308, 2017 | 16 | 2017 |
| Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator Z Wu, J Li Nanoscale research letters 7, 1-5, 2012 | 16 | 2012 |
| Two-dimensional heterojunction photovoltaic cells with low spontaneous-radiation loss and high efficiency limit J Liu, M Fan, K Luo, Q Yang, J Li, Z Wu Physical Review Applied 12 (3), 034023, 2019 | 15 | 2019 |
| Perfect light trapping in nanoscale thickness semiconductor films with a resonant back reflector and spectrum-splitting structures JT Liu, XH Deng, W Yang, J Li Physical Chemistry Chemical Physics 17 (5), 3303-3308, 2015 | 14 | 2015 |
| Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer S Ke, S Lin, X Li, J Li, J Xu, C Li, S Chen Optics Express 24 (3), 1943-1952, 2016 | 12 | 2016 |
| Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition Q Lu, R Huang, X Lan, X Chi, C Lu, C Li, Z Wu, J Li, G Han, P Yan Materials Letters 169, 164-167, 2016 | 11 | 2016 |
| Ohmic contact to n-type Ge with compositional W nitride HD Wu, C Wang, JB Wei, W Huang, C Li, HK Lai, J Li, C Liu, SY Chen IEEE Electron Device Letters 35 (12), 1188-1190, 2014 | 11 | 2014 |
| Influence of implantation damages and intrinsic dislocations on phosphorus diffusion in Ge Y Ruan, C Chen, S Huang, W Huang, S Chen, C Li, J Li IEEE transactions on electron devices 60 (11), 3741-3745, 2013 | 10 | 2013 |
| Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film D Qi, H Liu, W Gao, S Chen, C Li, H Lai, W Huang, J Li Optics express 21 (8), 9923-9930, 2013 | 8 | 2013 |
| Schottky barrier height modulation effect on n-Ge with TaN contact J Wang, W Huang, J Xu, J Li, S Huang, C Li, S Chen Materials Science in Semiconductor Processing 91, 206-211, 2019 | 7 | 2019 |
| Texture evolution and grain competition in NiGe Film on Ge (001) W Huang, M Tang, C Wang, C Li, J Li, S Chen, C Xue, H Lai Applied Physics Express 6 (7), 075505, 2013 | 7 | 2013 |
Kai ChangSKLSM, Institute of Semiconductors, CASVerified email at semi.ac.cn
