Method for fabricating a semiconductor structure including a metal oxide interface with silicon J Ramdani, R Droopad, Z Yu
US Patent 6,709,989, 2004
617 2004 Field effect transistors with gate dielectric on Si K Eisenbeiser, JM Finder, Z Yu, J Ramdani, JA Curless, JA Hallmark, ...
Applied Physics Letters 76 (10), 1324-1326, 2000
447 2000 Epitaxial BiFeO3 thin films on Si J Wang, H Zheng, Z Ma, S Prasertchoung, M Wuttig, R Droopad, J Yu, ...
Applied Physics Letters 85 (13), 2574-2576, 2004
319 2004 Band discontinuities at epitaxial heterojunctions SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani, K Eisenbeiser
Applied Physics Letters 77 (11), 1662-1664, 2000
271 2000 Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...
IEEE Electron Device Letters 28 (12), 1080-1082, 2007
230 2007 Epitaxial oxide thin films on Si (001) Z Yu, J Ramdani, JA Curless, CD Overgaard, JM Finder, R Droopad, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
196 2000 Two-dimensional growth of high-quality strontium titanate thin films on Si H Li, X Hu, Y Wei, Z Yu, X Zhang, R Droopad, AA Demkov, J Edwards Jr, ...
Journal of Applied Physics 93 (8), 4521-4525, 2003
186 2003 Epitaxial ferroelectric thin films on Si using template layers Y Wang, C Ganpule, BT Liu, H Li, K Mori, B Hill, M Wuttig, R Ramesh, ...
Applied Physics Letters 80 (1), 97-99, 2002
186 2002 Low leakage current metal oxide-nitrides and method of fabricating same Z Yu, R Droopad, C Overgaard, J Edwards
US Patent App. 09/755,691, 2002
184 2002 Semiconductor structure Z Yu, J Ramdani, R Droopad
US Patent 6,501,121, 2002
165 2002 Electro-optic structure and process for fabricating same J Ramdani, L Hilt, R Droopad, WJ Ooms
US Patent 6,493,497, 2002
160 2002 Band offset and structure of heterojunctions SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (3 …, 2001
158 2001 Optical properties of bulk and thin-film on Si and Pt S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
154 2000 Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors S Ghose, S Rahman, L Hong, JS Rojas-Ramirez, H Jin, K Park, R Klie, ...
Journal of Applied Physics 122 (9), 2017
151 2017 Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si V Nagarajan, A Stanishevsky, L Chen, T Zhao, BT Liu, J Melngailis, ...
Applied physics letters 81 (22), 4215-4217, 2002
147 2002 Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline films Y Wei, X Hu, Y Liang, DC Jordan, B Craigo, R Droopad, Z Yu, A Demkov, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
141 2002 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same J Ramdani, R Droopad, LL Hilt, KW Eisenbeiser
US Patent 6,392,257, 2002
124 2002 Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor M Passlack, JK Abrokwah, R Droopad, Z Yu, C Overgaard, SI Yi, M Hale, ...
IEEE Electron Device Letters 23 (9), 508-510, 2002
122 2002 The interface of epitaxial on silicon: in situ and ex situ studies X Hu, H Li, Y Liang, Y Wei, Z Yu, D Marshall, J Edwards Jr, R Droopad, ...
Applied physics letters 82 (2), 203-205, 2003
121 2003 GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer K Eisenbeiser, R Emrick, R Droopad, Z Yu, J Finder, S Rockwell, ...
IEEE Electron Device Letters 23 (6), 300-302, 2002
120 2002