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Yiping Zhang
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The composition effect on the optical properties of aqueous synthesized Cu–In–S and Zn–Cu–In–S quantum dot nanocrystals
B Zhang, Y Wang, C Yang, S Hu, Y Gao, Y Zhang, Y Wang, HV Demir, ...
Physical Chemistry Chemical Physics 17 (38), 25133-25141, 2015
902015
Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, ZB Kyaw, XL Zhang, SP Lu, ...
Applied Physics Letters 102 (24), 2013
502013
Advantages of the blue InGaN/GaN light-emitting diodes with an AlGaN/GaN/AlGaN quantum well structured electron blocking layer
ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, Z Kyaw, XL Zhang, SP Lu, ...
Acs Photonics 1 (4), 377-381, 2014
412014
A hole accelerator for InGaN/GaN light-emitting diodes
ZH Zhang, W Liu, ST Tan, Y Ji, L Wang, B Zhu, Y Zhang, S Lu, X Zhang, ...
Applied Physics Letters 105 (15), 2014
392014
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw, X Zhang, N Hasanov, B Zhu, ...
Optics Express 22 (103), A779-A789, 2014
372014
On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
ZH Zhang, Y Ji, W Liu, S Tiam Tan, Z Kyaw, Z Ju, X Zhang, N Hasanov, ...
Applied Physics Letters 104 (7), 2014
352014
Nonradiative recombination—critical in choosing quantum well number for InGaN/GaN light-emitting diodes
YP Zhang, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, LC Wang, ...
Optics Express 23 (3), A34-A42, 2015
302015
Low thermal-mass LEDs: size effect and limits
S Lu, W Liu, ZH Zhang, ST Tan, Z Ju, Y Ji, X Zhang, Y Zhang, B Zhu, ...
Optics Express 22 (26), 32200-32207, 2014
212014
Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
Y Zhang, ZH Zhang, ST Tan, PL Hernandez-Martinez, B Zhu, S Lu, ...
Applied Physics Letters 110 (3), 2017
182017
Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
Z Kyaw, ZH Zhang, W Liu, S Tiam Tan, Z Gang Ju, X Liang Zhang, Y Ji, ...
Applied Physics Letters 104 (16), 2014
172014
High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator
Y Wang, B Wang, WA Sasangka, S Bao, Y Zhang, HV Demir, J Michel, ...
Photonics Research 6 (4), 290-295, 2018
112018
Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts
N Hasanov, B Zhu, VK Sharma, S Lu, Y Zhang, W Liu, ST Tan, XW Sun, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
102016
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
Z Kyaw, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, N Hasanov, ...
Optics Express 22 (1), 809-816, 2014
102014
High-performance triangular miniaturized-LEDs for high current and power density applications
S Lu, Y Zhang, ZH Zhang, B Zhu, H Zheng, ST Tan, HV Demir
ACS Photonics 8 (8), 2304-2310, 2021
92021
Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes
B Zhu, W Liu, S Lu, Y Zhang, N Hasanov, X Zhang, Y Ji, ZH Zhang, ...
Journal of Physics D: Applied Physics 49 (26), 265106, 2016
72016
Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture
Y Zhang, S Lu, Y Qiu, J Wu, M Zhang, D Luo
Frontiers in Chemistry 8, 630050, 2021
42021
Efficiency boosting by thermal harvesting in ingan/Gan light-emitting diodes
S Lu, Y Zhang, Y Qiu, X Liu, M Zhang, D Luo
Frontiers in Physics 9, 752476, 2021
32021
Strain-reduced micro-LEDs grown directly using partitioned growth
S Lu, Y Zhang, ZH Zhang, PC Tsai, X Zhang, ST Tan, HV Demir
Frontiers in chemistry 9, 639023, 2021
32021
Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency
H Zheng, VK Sharma, P Tsai, Y Zhang, S Lu, X Zhang, ST Tan, HV Demir
AIP Advances 12 (1), 2022
22022
Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes
B Zhu, ST Tan, W Liu, S Lu, Y Zhang, S Chen, N Hasanov, X Kang, ...
IEEE Photonics Journal 8 (3), 1-8, 2016
22016
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