| Air spacer for 10nm FinFET CMOS and beyond K Cheng, C Park, C Yeung, S Nguyen, J Zhang, X Miao, M Wang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2016 | 53 | 2016 |
| EUV patterning successes and frontiers N Felix, D Corliss, K Petrillo, N Saulnier, Y Xu, L Meli, H Tang, A De Silva, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 480-486, 2016 | 39 | 2016 |
| BEOL process integration for the 7 nm technology node T Standaert, G Beique, HC Chen, ST Chen, B Hamieh, J Lee, ... 2016 IEEE international interconnect technology conference/advanced …, 2016 | 37 | 2016 |
| Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices RQH L. F. Liu, J. F. Kang, H. Tang, N. Xu, Y. Wang, X.. Y. Liu, X. Zhang International Conference on Solid State Devices and Materials, 2007 | 36* | 2007 |
| Comparison of left and right side line edge roughness in lithography L Sun, N Saulnier, G Beique, E Verduijn, W Wang, Y Xu, H Tang, Y Chen, ... Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016 | 21 | 2016 |
| The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol–gel method LF Liu, JF Kang, Y Wang, H Tang, LG Kong, L Sun, X Zhang, RQ Han Journal of magnetism and magnetic materials 308 (1), 85-89, 2007 | 21 | 2007 |
| The role of oxygen vacancies in magnetism of CoxTi1− xO2− δ films on Si (001) prepared by sol–gel method LF Liu, JF Kang, Y Wang, H Tang, LG Kong, X Zhang, RQ Han Solid state communications 139 (6), 263-267, 2006 | 19 | 2006 |
| Multi-layer filled gate cut to prevent power rail shorting to gate structure K Cheng, H Tang, P Xu US Patent 9,805,983, 2017 | 18 | 2017 |
| Analysis of DNA-guided self-assembly of microspheres using imaging flow cytometry H Tang, R Deschner, P Allen, Y Cho, P Sermas, A Maurer, AD Ellington, ... Journal of the American Chemical Society 134 (37), 15245-15248, 2012 | 18 | 2012 |
| Electrical test prediction using hybrid metrology and machine learning M Breton, R Chao, GR Muthinti, A Abraham, J Simon, AJ Cepler, ... Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017 | 17 | 2017 |
| CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond T Ando, E Cartier, P Jamison, A Pyzyna, S Kim, J Bruley, K Chung, ... 2016 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2016 | 12 | 2016 |
| Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm R Xie, C Park, R Conti, R Robison, H Zhou, I Saraf, A Carr, SSC Fan, ... 2019 Symposium on VLSI Technology, T148-T149, 2019 | 8 | 2019 |
| Alignment through topography on intermediate component for memory device patterning H Tang, M Rizzolo, OK Injo, TE Standaert US Patent 10,658,589, 2020 | 7 | 2020 |
| Methods of forming a gate contact structure for a transistor R Xie, H Tang, C Chi, D Chanemougame, LW Liebmann, MV Raymond US Patent 10,490,641, 2019 | 5 | 2019 |
| Directed self-assembly patterning strategies for phase change memory applications RL Bruce, G Fraczak, JM Papalia, HY Tsai, M BrightSky, H Miyazoe, ... Advanced Etch Technology for Nanopatterning VI 10149, 25-34, 2017 | 5 | 2017 |
| Progress report on the generation of polyfunctional microscale particles for programmed self-assembly R Deschner, H Tang, P Allen, C Hall, R Hlis, A Ellington, CG Willson Chemistry of Materials 26 (3), 1457-1462, 2014 | 5 | 2014 |
| Efficient metal-insulator-metal capacitor K Chung, IC Estrada-Raygoza, H Jagannathan, C Liu, YAM Mignot, ... US Patent 10,090,378, 2018 | 4 | 2018 |
| Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications LF Liu, H Tang, Y Wang, W Wang, D Tian, X Liu, X Zhang, R Han, J Kang 2006 8th International Conference on Solid-State and Integrated Circuit …, 2006 | 4 | 2006 |
| Lithographic photomask alignment using non-planar alignment structures formed on wafer CC Yang, H Tang, D Metzler, CB Peethala US Patent 10,534,276, 2020 | 3 | 2020 |
| Methods of forming a gate contact structure above an active region of a transistor R Xie, H Tang, C Chi, D Chanemougame, LW Liebmann, MV Raymond US Patent 10,483,363, 2019 | 3 | 2019 |
Nelson Felixcornell universityVerified email at us.ibm.com
