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Lei Wan
Lei Wan
Western Digital
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Title
Cited by
Cited by
Year
Imprint mold and method for making using sidewall spacer line doubling
H Gao, JS Lille, L Wan
US Patent App. 13/772,642, 2014
4792014
Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
YA Chapuis, R Ruiz, L Wan
US Patent 8,900,467, 2014
3832014
Nanoscale chemical imaging by photoinduced force microscopy
D Nowak, W Morrison, HK Wickramasinghe, J Jahng, E Potma, L Wan, ...
Science advances 2 (3), e1501571, 2016
2982016
Bit-patterned magnetic recording: Theory, media fabrication, and recording performance
TR Albrecht, H Arora, V Ayanoor-Vitikkate, JM Beaujour, D Bedau, ...
IEEE Transactions on Magnetics 51 (5), 1-42, 2015
2652015
Directed self-assembly of block copolymers on chemical patterns: A platform for nanofabrication
S Ji, L Wan, CC Liu, PF Nealey
Progress in Polymer Science 54, 76-127, 2016
2162016
The Limits of Lamellae-Forming PS-b-PMMA Block Copolymers for Lithography
L Wan, R Ruiz, H Gao, KC Patel, TR Albrecht, J Yin, J Kim, Y Cao, G Lin
ACS nano 9 (7), 7506-7514, 2015
1562015
Directed Block Copolymer Assembly versus Electron Beam Lithography for Bit-Patterned Media with Areal Density of 1 Terabit/inch2 and Beyond
XM Yang, L Wan, S Xiao, Y Xu, DK Weller
Acs Nano 3 (7), 1844-1858, 2009
1272009
Dually responsive multiblock copolymers via reversible addition− fragmentation chain transfer polymerization: synthesis of temperature-and redox-responsive copolymers of poly …
YZ You, QH Zhou, DS Manickam, L Wan, GZ Mao, D Oupický
Macromolecules 40 (24), 8617-8624, 2007
1262007
Influence of TAT-peptide polymerization on properties and transfection activity of TAT/DNA polyplexes
DS Manickam, HS Bisht, L Wan, G Mao, D Oupicky
Journal of Controlled Release 102 (1), 293-306, 2005
1242005
Influence of Nano-Carrier Architecture on in Vitro siRNA Delivery Performance and in Vivo Biodistribution: Polyplexes vs Micelleplexes
DJ Gary, H Lee, R Sharma, JS Lee, Y Kim, ZY Cui, D Jia, VD Bowman, ...
ACS nano 5 (5), 3493-3505, 2011
1172011
Bit Patterned Media at 1 Tdot/in2 and Beyond
TR Albrecht, D Bedau, E Dobisz, H Gao, M Grobis, O Hellwig, D Kercher, ...
IEEE Transactions on Magnetics 49 (2), 773-778, 2013
1052013
Evolutionary optimization of directed self-assembly of triblock copolymers on chemically patterned substrates
GS Khaira, J Qin, GP Garner, S Xiong, L Wan, R Ruiz, HM Jaeger, ...
ACS Macro Letters 3 (8), 747-752, 2014
832014
Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing
S Xiong, L Wan, Y Ishida, YA Chapuis, GSW Craig, R Ruiz, PF Nealey
ACS nano 10 (8), 7855-7865, 2016
762016
Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST
J Cushen, L Wan, G Blachut, MJ Maher, TR Albrecht, CJ Ellison, ...
ACS applied materials & interfaces 7 (24), 13476-13483, 2015
702015
Solvent annealing block copolymers on patterned substrates
PF Nealey, L Wan
US Patent 9,299,381, 2016
682016
Topcoat approaches for directed self-assembly of strongly segregating block copolymer thin films
H Yoshida, HS Suh, A Ramirez-Herunandez, JI Lee, K Aida, L Wan, ...
Journal of Photopolymer Science and Technology 26 (1), 55-58, 2013
652013
Image quality and pattern transfer in directed self assembly with block-selective atomic layer deposition
R Ruiz, L Wan, J Lille, KC Patel, E Dobisz, DE Johnston, K Kisslinger, ...
Journal of Vacuum Science & Technology B 30 (6), 2012
632012
Toward 1Tdot∕ in. 2 nanoimprint lithography for magnetic bit-patterned media: Opportunities and challenges
XM Yang, Y Xu, C Seiler, L Wan, S Xiao
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
572008
Fabrication of templates with rectangular bits on circular tracks by combining block copolymer directed self-assembly and nanoimprint lithography
L Wan, R Ruiz, H Gao, KC Patel, J Lille, G Zeltzer, EA Dobisz, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 11 (3), 031405-031405, 2012
472012
Block copolymer assembly methods and patterns formed thereby
S Xiao, XM Yang, Y Xu, L Wan
US Patent 8,673,541, 2014
432014
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