| Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact BT Jonker, G Kioseoglou, AT Hanbicki, CH Li, PE Thompson Nature Physics 3 (8), 542-546, 2007 | 502 | 2007 |
| The role of strain in hydrogenation induced cracking in Si/Si {sub 1-x} Ge {sub x}/Si structures S Lin, D Zengfeng, QX Jia, YQ Wang, M Nastasi, L Yuan, PE Thompson, ... Applied Physics Letters 93 (4), 2008 | 419 | 2008 |
| Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry OMJ Van’t Erve, AT Hanbicki, M Holub, CH Li, C Awo-Affouda, ... Applied Physics Letters 91 (21), 2007 | 332 | 2007 |
| Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998 | 205 | 1998 |
| Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ... Journal of Electronic Materials 29, 897-900, 2000 | 115 | 2000 |
| Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy PE Thompson, JL Davis, J Waterman, RJ Wagner, D Gammon, DK Gaskill, ... Journal of applied physics 69 (10), 7166-7172, 1991 | 86 | 1991 |
| A diffusional model for the oxidation behavior of alloys SJ Kilpatrick, RJ Jaccodine, PE Thompson Journal of applied physics 81 (12), 8018-8028, 1997 | 79 | 1997 |
| Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ... Applied Physics Letters 78 (6), 814-816, 2001 | 76 | 2001 |
| Electrical spin injection into moderately doped silicon enabled by tailored interfaces R Jansen, BC Min, SP Dash, S Sharma, G Kioseoglou, AT Hanbicki, ... Physical Review B 82 (24), 241305, 2010 | 75 | 2010 |
| Si-based resonant interband tunneling diodes and method of making interband tunneling diodes PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel US Patent 6,803,598, 2004 | 75 | 2004 |
| Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ... IEEE electron device letters 25 (9), 646-648, 2004 | 75 | 2004 |
| Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons Surface Science 334 (1-3), 29-38, 1995 | 67 | 1995 |
| peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications N Jin, SY Chung, AT Rice, PR Berger, R Yu, PE Thompson, R Lake Applied physics letters 83 (16), 3308-3310, 2003 | 64 | 2003 |
| Low‐temperature cleaning processes for Si molecular beam epitaxy PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 64 | 1993 |
| Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ... Solid-State Electronics 48 (10-11), 1907-1910, 2004 | 61 | 2004 |
| Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ... IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003 | 60 | 2003 |
| Information processing with pure spin currents in silicon: Spin injection, extraction, manipulation, and detection OMJ van't Erve, C Awo-Affouda, AT Hanbicki, CH Li, PE Thompson, ... IEEE transactions on electron devices 56 (10), 2343-2347, 2009 | 57 | 2009 |
| Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe/Al2O3 tunnel contacts G Kioseoglou, AT Hanbicki, R Goswami, OMJ van‘t Erve, CH Li, G Spanos, ... Applied Physics Letters 94 (12), 2009 | 57 | 2009 |
| A 230-Watt S-band SiGe heterojunction bipolar transistor PA Potyraj, KJ Petrosky, KD Hobart, FJ Kub, PE Thompson IEEE Transactions on Microwave Theory and Techniques 44 (12), 2392-2397, 1996 | 56 | 1996 |
| Molecular beam epitaxy growth of InSb films on GaAs JL Davis, PE Thompson Applied physics letters 54 (22), 2235-2237, 1989 | 55 | 1989 |
Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State UniversityVerified email at ieee.org
