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Choong Hee Lee (Postdoctoral researcher)
Choong Hee Lee (Postdoctoral researcher)
Verified email at nrel.gov
Title
Cited by
Cited by
Year
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit
DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ...
Nano letters 18 (5), 3125-3131, 2018
6802018
p-type doping of MoS2 thin films using Nb
MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ...
Applied Physics Letters 104 (9), 2014
3392014
Influence of thermal annealing ambient on Ga-doped ZnO thin films
B Du Ahn, SH Oh, CH Lee, GH Kim, HJ Kim, SY Lee
Journal of Crystal Growth 309 (2), 128-133, 2007
1752007
Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature
JH Kim, BD Ahn, CH Lee, KA Jeon, HS Kang, SY Lee
Journal of Applied Physics 100 (11), 2006
972006
Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters
JH Kim, B Du Ahn, CH Kim, KA Jeon, HS Kang, SY Lee
Thin Solid Films 516 (7), 1330-1333, 2008
812008
Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films
B Du Ahn, JH Kim, HS Kang, CH Lee, SH Oh, KW Kim, G Jang, SY Lee
Thin Solid Films 516 (7), 1382-1385, 2008
802008
Layer-transferred MoS2/GaN PN diodes
EW Lee, CH Lee, PK Paul, L Ma, WD McCulloch, S Krishnamoorthy, Y Wu, ...
Applied Physics Letters 107 (10), 2015
792015
Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes
JH Kim, B Du Ahn, CH Lee, KA Jeon, HS Kang, SY Lee
Thin Solid Films 516 (7), 1529-1532, 2008
772008
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V− 1 s− 1
L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu
Applied Physics Letters 105 (7), 2014
752014
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ...
Journal of Applied Physics 121 (9), 2017
742017
High current density 2D/3D MoS2/GaN Esaki tunnel diodes
S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ...
Applied Physics Letters 109 (18), 2016
742016
Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions
EW Lee, L Ma, DN Nath, CH Lee, A Arehart, Y Wu, S Rajan
Applied Physics Letters 105 (20), 2014
502014
Use of laser lift-off for flexible device applications
CH Lee, SJ Kim, Y Oh, MY Kim, YJ Yoon, HS Lee
Journal of Applied Physics 108 (10), 2010
412010
Enhancement in electrical and optical properties of indium tin oxide thin films grown using a pulsed laser deposition at room temperature by two-step process
JH Kim, B Du Ahn, CH Lee, KA Jeon, HS Kang, GH Kim, SY Lee
Thin Solid Films 515 (7-8), 3580-3583, 2007
382007
Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz
H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ...
Applied Physics Express 12 (6), 066502, 2019
332019
Transferred large area single crystal MoS2 field effect transistors
CH Lee, W McCulloch, EW Lee, L Ma, S Krishnamoorthy, J Hwang, Y Wu, ...
Applied Physics Letters 107 (19), 2015
292015
BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ...
Applied Physics Letters 116 (2), 2020
272020
A self-limiting layer-by-layer etching technique for 2H-MoS2
CH Lee, EW Lee, W McCulloch, Z Jamal-Eddine, S Krishnamoorthy, ...
Applied Physics Express 10 (3), 035201, 2017
182017
Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy
CH Lee, S Krishnamoorthy, PK Paul, DJ O'Hara, MR Brenner, ...
Applied Physics Letters 111 (20), 2017
132017
Epitaxial Dirac semimetal vertical heterostructures for advanced device architectures
AD Rice, CH Lee, B Fluegel, AG Norman, JN Nelson, CS Jiang, M Steger, ...
Advanced Functional Materials 32 (21), 2111470, 2022
122022
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