| The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I–V–T characteristics AF Özdemir, A Turut, A Kökçe Semiconductor science and technology 21 (3), 298, 2006 | 104 | 2006 |
| Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide … ÇŞ Güçlü, AF Özdemir, Ş Altindal Applied Physics A 122, 1-9, 2016 | 71 | 2016 |
| Investigation of temperature dependent negative capacitance in the forward bias CV characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) ÇŞ Güçlü, AF Özdemir, A Karabulut, A Kökce, Ş Altındal Materials Science in Semiconductor Processing 89, 26-31, 2019 | 65 | 2019 |
| The investigation of current-conduction mechanisms (CCMs) in Au/(0.07 Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (IVT) measurements MH Al-Dharob, HE Lapa, A Kökce, AF Özdemir, DA Aldemir, Ş Altındal Materials Science in Semiconductor Processing 85, 98-105, 2018 | 57 | 2018 |
| The interface state energy distribution from capacitance–frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air AF Özdemir, A Türüt, A Kokce Thin Solid Films 425 (1-2), 210-215, 2003 | 48 | 2003 |
| Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts AF Özdemir, DA Aldemir, A Kökce, S Altindal Synthetic Metals 159 (14), 1427-1432, 2009 | 40 | 2009 |
| Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts T Göksu, N Yıldırım, H Korkut, AF Özdemir, A Turut, A Kökçe Microelectronic Engineering 87 (9), 1781-1784, 2010 | 35 | 2010 |
| Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes HE Lapa, A Kökce, DA Aldemir, AF Özdemir, Ş Altındal Indian Journal of Physics 94, 1901-1908, 2020 | 31 | 2020 |
| The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer … MH Al-Dharob, A Kökce, DA Aldemir, AF Özdemir, Ş Altındal Journal of Physics and Chemistry of Solids 144, 109523, 2020 | 31 | 2020 |
| The electrical measurements in poly (2-chloroaniline) based thin film sandwich devices AF Özdemir, A Gök, A Türüt Thin Solid Films 515 (18), 7253-7258, 2007 | 31 | 2007 |
| Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer DA Aldemir, M Esen, A Kökce, S Karataş, AF Özdemir Thin Solid Films 519 (18), 6004-6009, 2011 | 30 | 2011 |
| Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature Ş Altındal, AF Özdemir, Ş Aydoğan, A Türüt Journal of Materials Science: Materials in Electronics 33 (15), 12210-12223, 2022 | 26 | 2022 |
| Frequency and voltage-dependent dielectric properties and AC electrical conductivity of (Au/Ti)/Al₂O₃/n-GaAs with thin Al₂O₃ interfacial layer at room temperature Ç Güçlü, A Özdemır, A Kökce, Ş Altindal Acta Physica Polonica A 130 (1), 325-330, 2016 | 26 | 2016 |
| The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80 … ÇŞ Güçlü, AF Özdemir, DA Aldemir, Ş Altındal Journal of Materials Science: Materials in Electronics 32, 5624-5634, 2021 | 24 | 2021 |
| Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature HE Lapa, A Kökce, M Al-Dharob, İ Orak, AF Özdemir, S Altındal The European Physical Journal Applied Physics 80 (1), 10101, 2017 | 21 | 2017 |
| The effects of the temperature on IV and CV characteristics of Al/P2ClAn (C2H5COOH)/p-Si/Al structure AF Özdemir, Z Kotan, DA Aldemir, S Altındal The European Physical Journal-Applied Physics 46 (2), 20402, 2009 | 19 | 2009 |
| Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes DA Aldemir, A Kökce, AF Özdemir Microelectronic engineering 98, 6-11, 2012 | 18 | 2012 |
| The effect of hydrostatic pressure on the electrical characterization of Au/n-InP Schottky diodes N Uçar, AF Ozdemir, DA Aldemir, S Çakmak, A Calik, H Yildiz, F Cimilli Superlattices and Microstructures 47 (5), 586-591, 2010 | 18 | 2010 |
| The effects of the time-dependent and exposure time to air on Au/n-GaAs schottky barrier diodes AF Özdemir, A Kőkçe, A Türüt Applied surface science 191 (1-4), 188-195, 2002 | 16 | 2002 |
| A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy … HE Lapa, A Kökce, AF Özdemir, İ Uslu, Ş Altindal Bulletin of Materials Science 41, 1-6, 2018 | 15 | 2018 |
