Scott D  Sifferman
Scott D Sifferman
Systems & Processes Engineering Corporation (SPEC)
Verified email at utexas.edu - Homepage
Title
Cited by
Cited by
Year
Highly strained mid-infrared type-I diode lasers on GaSb
SD Sifferman, HP Nair, R Salas, NT Sheehan, SJ Maddox, AM Crook, ...
IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 1-10, 2015
30*2015
Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, ...
Applied Physics Letters 106 (8), 081103, 2015
272015
1E-3 Tomographic Photoacoustic Imaging Using Capacitive Micromachined Ultrasonic Transducer (CMUT) Technology
S Vaithilingam, IO Wygant, S Sifferman, X Zhuang, Y Furukawa, ...
Ultrasonics Symposium, 2006. IEEE, 397-400, 2006
122006
Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, KM McNicholas, SD Sifferman, VD Dasika, D Jung, ...
Applied Physics Letters 108 (18), 182102, 2016
92016
Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, D Jung, ...
APL Materials 5 (9), 096106, 2017
52017
Auger Recombination in Mid-Infrared Active Regions
KJ Underwood, AF Briggs, SD Sifferman, SR Bank, JT Gopinath
CLEO: Science and Innovations, JTh2A. 85, 2018
12018
Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
RH El-Jaroudi, KM McNicholas, AF Briggs, SD Sifferman, L Nordin, ...
Applied Physics Letters 117 (2), 021102, 2020
2020
Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions
KJ Underwood, AF Briggs, SD Sifferman, VB Verma, NS Sirica, ...
Applied Physics Letters 116 (26), 262103, 2020
2020
Auger Recombination in Strained Mid-Infrared Quantum Wells
KJ Underwood, AF Briggs, SD Sifferman, VB Verma, NS Sirica, ...
CLEO: Science and Innovations, STh4F. 3, 2020
2020
Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers
SD Sifferman, M Motyka, AF Briggs, KJ Underwood, KM McNicholas, ...
CLEO: Science and Innovations, STh4I. 3, 2018
2018
The effects of a bismuth flux on strained-layer III-V optical materials
SD Sifferman, AK Rockwell, KM McNicholas, Y Sun, R Salas, SJ Maddox, ...
59th Electronic Materials Conference (EMC), 2017
2017
Surfactant-mediated epitaxy of III-V digital alloys
AK Rockwell, M Woodson, M Ren, SJ Maddox, SD Sifferman, ...
59th Electronic Materials Conference (EMC), 2017
2017
Growth rate dependent surface morphology of rare earth arsenide films
KM McNicholas, R Salas, SD Sifferman, D Jung, ML Lee, SR Bank
59th Electronic Materials Conference (EMC), 2017
2017
Growth and properties of Boron-III-As alloy
KM McNicholas, RH El-Jaroudi, AF Briggs, SD March, SD Sifferman, ...
59th Electronic Materials Conference (EMC), 2017
2017
Surfactant-Mediated Growth of RE-As:InGaAs Nanocomposites
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, D Jung, ...
International Molecular Beam Epitaxy Conf. (IMBE), 2014
2014
Compositionally-Graded Structures for Photon-Enhanced Thermionic Emitters
SD Sifferman, JW Schwede, DC Riley, RT Howe, Z Shen, NA Melosh, ...
56th Electronic Materials Conf. (EMC), 2014
2014
Properties of RE-As:InGaAs Nanocomposites
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, ...
56th Electronic Materials Conf. (EMC), 2014
2014
The system can't perform the operation now. Try again later.
Articles 1–17