| Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist M Gnan, S Thoms, DS Macintyre, RM De La Rue, M Sorel Electronics Letters 44 (2), 115-116, 2008 | 275 | 2008 |
| Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ... IEEE Electron Device Letters 28 (12), 1080-1082, 2007 | 230 | 2007 |
| Reactive ion etching of GaAs using a mixture of methane and hydrogen R Cheung, S Thoms, SP Beamont, G Doughty, V Law, CDW Wilkinson Electronics Letters 23 (16), 857-859, 1987 | 148 | 1987 |
| Low-loss propagation in photonic crystal waveguides L O’Faolain, X Yuan, D McIntyre, S Thoms, H Chong, RM De La Rue, ... Electron. Lett 42 (25), 1454-1455, 2006 | 141 | 2006 |
| Fabrication of 3 nm wires using 100 keV electron beam lithography and poly (methyl methacrylate) resist DRS Cumming, S Thoms, SP Beaumont, JMR Weaver Applied physics letters 68 (3), 322-324, 1996 | 138 | 1996 |
| Arrays of nano-dots for cellular engineering N Gadegaard, S Thoms, DS Macintyre, K Mcghee, J Gallagher, B Casey, ... Microelectronic Engineering 67, 162-168, 2003 | 121 | 2003 |
| Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs T Krauss, YP Song, S Thoms, CDW Wilkinson, RM DelaRue Electronics Letters 30 (17), 1444-1446, 1994 | 113 | 1994 |
| High mobility III-V MOSFETs for RF and digital applications M Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ... 2007 IEEE International Electron Devices Meeting, 621-624, 2007 | 108 | 2007 |
| Terahertz oscillations in an In0. 53Ga0. 47As submicron planar Gunn diode A Khalid, GM Dunn, RF Macpherson, S Thoms, D Macintyre, C Li, ... Journal of Applied Physics 115 (11), 2014 | 88 | 2014 |
| Dry etching damage in III–V semiconductors S Murad, M Rahman, N Johnson, S Thoms, SP Beaumont, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 80 | 1996 |
| Passivation of donors in electron beam lithographically defined nanostructures after methane/hydrogen reactive ion etching R Cheung, S Thoms, I McIntyre, CDW Wilkinson, SP Beaumont Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988 | 74 | 1988 |
| Observation of universal thermopower fluctuations BL Gallagher, T Galloway, P Beton, JP Oxley, SP Beaumont, S Thoms, ... Physical review letters 64 (17), 2058, 1990 | 69 | 1990 |
| Universal conductance fluctuations in the magnetoresistance of submicron-size n+-GaAs wires and laterally confined n−-GaAs/(AlGa) As heterostructures RP Taylor, ML Leadbeater, GP Whittington, PC Main, L Eaves, ... Surface Science 196 (1-3), 52-58, 1988 | 67 | 1988 |
| Fabrication of multipassband moiré resonators in fibers by the dual-phase-mask exposure method LA Everall, K Sugden, JAR Williams, I Bennion, X Liu, JS Aitchison, ... Optics letters 22 (19), 1473-1475, 1997 | 66 | 1997 |
| Generic scanned-probe microscope sensors by combined micromachining and electron-beam lithography H Zhou, A Midha, G Mills, S Thoms, SK Murad, JMR Weaver Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 61 | 1998 |
| Raman scattering of coupled longitudinal optical phonon‐plasmon modes in dry etched n+‐GaAs PD Wang, MA Foad, CM Sotomayor‐Torres, S Thoms, M Watt, R Cheung, ... Journal of applied physics 71 (8), 3754-3759, 1992 | 60 | 1992 |
| Pattern transfer of a 23 nm-period grating and sub-15 nm dots into CVD diamond KA Lister, BG Casey, PS Dobson, S Thoms, DS Macintyre, ... Microelectronic engineering 73, 319-322, 2004 | 59 | 2004 |
| The fabrication of high resolution features by mould injection D Macintyre, S Thoms Microelectronic Engineering 41, 211-214, 1998 | 58 | 1998 |
| Direct imprint of sub-10nm features into metal using diamond and SiC stamps KA Lister, S Thoms, DS Macintyre, CDW Wilkinson, JMR Weaver, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 56 | 2004 |
| Electron Mobility in Surface- and Buried-Channel FlatbandMOSFETs With ALDGate Dielectric SJ Bentley, M Holland, X Li, GW Paterson, H Zhou, O Ignatova, ... IEEE Electron Device Letters 32 (4), 494-496, 2011 | 48 | 2011 |
