The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices A Politano, G Chiarello, R Samnakay, G Liu, B Gürbulak, S Duman, ...
Nanoscale 8 (16), 8474-8479, 2016
117 2016 Liquid‐phase exfoliated indium–selenide flakes and their application in hydrogen evolution reaction E Petroni, E Lago, S Bellani, DW Boukhvalov, A Politano, B Gürbulak, ...
Small 14 (26), 1800749, 2018
110 2018 Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique EF Keskenler, M Tomakin, S Doğan, G Turgut, S Aydın, S Duman, ...
Journal of Alloys and Compounds 550, 129-132, 2013
92 2013 Indium selenide: an insight into electronic band structure and surface excitations A Politano, D Campi, M Cattelan, I Ben Amara, S Jaziri, A Mazzotti, ...
Scientific reports 7 (1), 3445, 2017
79 2017 The advent of indium selenide: Synthesis, electronic properties, ambient stability and applications DW Boukhvalov, B Gürbulak, S Duman, L Wang, A Politano, LS Caputi, ...
Nanomaterials 7 (11), 372, 2017
73 2017 Structural characterizations and optical properties of InSe and InSe: Ag semiconductors grown by Bridgman/Stockbarger technique B Gürbulak, M Şata, S Dogan, S Duman, A Ashkhasi, EF Keskenler
Physica E: Low-dimensional Systems and Nanostructures 64, 106-111, 2014
67 2014 Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes S Doğan, S Duman, B Gürbulak, S Tüzemen, H Morkoc
Physica E: Low-dimensional Systems and Nanostructures 41 (4), 646-651, 2009
66 2009 Liquid phase exfoliated indium selenide based highly sensitive photodetectors N Curreli, M Serri, D Spirito, E Lago, E Petroni, B Martín‐García, ...
Advanced Functional Materials 30 (13), 1908427, 2020
65 2020 Enhanced electrocatalytic activity in GaSe and InSe nanosheets: the role of surface oxides G D'Olimpio, S Nappini, M Vorokhta, L Lozzi, F Genuzio, TO Menteş, ...
Advanced Functional Materials 30 (43), 2005466, 2020
48 2020 The Urbach tails and optical absorption in layered semiconductor TlGaSe2 and TlGaS2 single crystals B Gürbulak, S Duman, A Ateş
Czechoslovak Journal of Physics 55, 93-103, 2005
37 2005 Capacitance and conductance–frequency characteristics of Au–Sb/p-GaSe: Gd Schottky barrier diode S Duman, B Gürbulak, S Doğan, A Türüt
Vacuum 85 (8), 798-801, 2011
36 2011 The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes S Duman, S Dogan, B Gürbulak, A Türüt
Applied Physics A 91, 337-340, 2008
33 2008 Growth and optical properties of Dy doped and undoped n-type InSe single crystal B Gürbulak
Solid state communications 109 (10), 665-669, 1999
33 1999 Temperature dependence of galvanomagnetic properties for Gd doped and undoped B Gürbulak, M Yildirim, S Tüzemen, H Efeoǧlu, YK Yoǧurtçu
Journal of applied physics 83 (4), 2030-2034, 1998
33 1998 Mass attenuation coefficients for n-type InSe, InSe: Gd, InSe: Ho and InSe: Er single crystals O İçelli, S Erzeneoǧlu, B Gürbulak
Journal of Quantitative Spectroscopy and Radiative Transfer 90 (3-4), 399-407, 2005
32 2005 Growth and temperature dependence of optical properties of Er doped and undoped n-Type InSe B Gürbulak, M Yildirim, A Ateş, S Doğan, YK Yoğurtçu
Japanese journal of applied physics 38 (9R), 5133, 1999
32 1999 The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode A Sefaoğlu, S Duman, S Doğan, B Gürbulak, S Tüzemen, A Türüt
Microelectronic engineering 85 (3), 631-635, 2008
31 2008 Fabrication and characterization of Al/Cu2 ZnSnS4 /n ‐Si/Al heterojunction photodiodes G Turgut, EF Keskenler, S Aydın, S Doğan, S Duman, Ş Özçelik, ...
physica status solidi (a) 211 (3), 580-586, 2014
30 2014 The optical investigation of TlGa0. 999Pr0. 001Se2 and TlGaSe2 single crystals B Gürbulak
Physica B: Condensed Matter 293 (3-4), 289-296, 2001
30 2001 Electrothermal investigation of the switching effect in p-Type TllnSe2 , TllnTe2 , and TIGaTe2 chain chalcogenide semiconductors B Abay, B Gürbulak, M Yildirim, H Efeoglu, S Tuzemen, YK Yogurtçu
Journal of electronic materials 25, 1054-1059, 1996
28 1996 