Bekir Gürbulak
Bekir Gürbulak
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The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
A Politano, G Chiarello, R Samnakay, G Liu, B Gürbulak, S Duman, ...
Nanoscale 8 (16), 8474-8479, 2016
Liquid‐Phase Exfoliated Indium–Selenide Flakes and Their Application in Hydrogen Evolution Reaction
E Petroni, E Lago, S Bellani, DW Boukhvalov, A Politano, B Gürbulak, ...
Small 14 (26), 1800749, 2018
Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique
EF Keskenler, M Tomakin, S Doğan, G Turgut, S Aydın, S Duman, ...
Journal of Alloys and Compounds 550, 129-132, 2013
Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes
S Doğan, S Duman, B Gürbulak, S Tüzemen, H Morkoc
Physica E: Low-dimensional Systems and Nanostructures 41 (4), 646-651, 2009
Indium selenide: an insight into electronic band structure and surface excitations
A Politano, D Campi, M Cattelan, I Ben Amara, S Jaziri, A Mazzotti, ...
Scientific reports 7 (1), 1-11, 2017
The advent of indium selenide: Synthesis, electronic properties, ambient stability and applications
DW Boukhvalov, B Gürbulak, S Duman, L Wang, A Politano, LS Caputi, ...
Nanomaterials 7 (11), 372, 2017
Structural characterizations and optical properties of InSe and InSe: Ag semiconductors grown by Bridgman/Stockbarger technique
B Gürbulak, M Şata, S Dogan, S Duman, A Ashkhasi, EF Keskenler
Physica E: Low-dimensional Systems and Nanostructures 64, 106-111, 2014
The optical investigation of TlGa0. 999Pr0. 001Se2 and TlGaSe2 single crystals
B Gürbulak
Physica B: Condensed Matter 293 (3-4), 289-296, 2001
Temperature dependence of galvanomagnetic properties for Gd doped and undoped -type GaSe
B Gürbulak, M Yildirim, S Tüzemen, H Efeoǧlu, YK Yoǧurtçu
Journal of applied physics 83 (4), 2030-2034, 1998
Capacitance and conductance–frequency characteristics of Au–Sb/p-GaSe: Gd Schottky barrier diode
S Duman, B Gürbulak, S Doğan, A Türüt
Vacuum 85 (8), 798-801, 2011
Fabrication and characterization of Al/Cu2ZnSnS4/n‐Si/Al heterojunction photodiodes
G Turgut, EF Keskenler, S Aydın, S Doğan, S Duman, Ş Özçelik, ...
physica status solidi (a) 211 (3), 580-586, 2014
The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes
S Duman, S Dogan, B Gürbulak, A Türüt
Applied Physics A 91 (2), 337-340, 2008
The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode
A Sefaoğlu, S Duman, S Doğan, B Gürbulak, S Tüzemen, A Türüt
Microelectronic engineering 85 (3), 631-635, 2008
Growth and temperature dependence of optical properties of Er doped and undoped n-Type InSe
B Gürbulak, M Yildirim, A Ateş, S Doğan, YK Yoğurtçu
Japanese journal of applied physics 38 (9R), 5133, 1999
Mass attenuation coefficients for n-type InSe, InSe: Gd, InSe: Ho and InSe: Er single crystals
O İçelli, S Erzeneoǧlu, B Gürbulak
Journal of Quantitative Spectroscopy and Radiative Transfer 90 (3-4), 399-407, 2005
Growth and optical properties of Dy doped and undoped n-type InSe single crystal
B Gürbulak
Solid state communications 109 (10), 665-669, 1999
Growth and Optical Properties of Ho Doped n‐Type Indium Selenide
B Gürbulak, M Yildirim, B Abay, S Tüzemen, M Alieva, YK Yoğurtç
physica status solidi (a) 168 (2), 495-500, 1998
Urbach tail and optical characterization of gadolinium-doped TlGaSe2 single crystals
B Gürbulak, S Duman
Physica Scripta 77 (2), 025702, 2008
Electrothermal investigation of the switching effect in p-Type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors
B Abay, B Gürbulak, M Yildirim, H Efeoglu, S Tuzemen, YK Yogurtcu
Journal of electronic materials 25 (7), 1054-1059, 1996
Evaluation of structural and optical properties of Mn-doped ZnO thin films synthesized by sol-gel technique
EF Keskenler, S Doğan, G Turgut, B Gürbulak
Metallurgical and Materials Transactions A 43 (13), 5088-5095, 2012
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