The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices A Politano, G Chiarello, R Samnakay, G Liu, B Gürbulak, S Duman, ... Nanoscale 8 (16), 8474-8479, 2016 | 117 | 2016 |
Liquid‐phase exfoliated indium–selenide flakes and their application in hydrogen evolution reaction E Petroni, E Lago, S Bellani, DW Boukhvalov, A Politano, B Gürbulak, ... Small 14 (26), 1800749, 2018 | 111 | 2018 |
Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique EF Keskenler, M Tomakin, S Doğan, G Turgut, S Aydın, S Duman, ... Journal of Alloys and Compounds 550, 129-132, 2013 | 92 | 2013 |
Indium selenide: an insight into electronic band structure and surface excitations A Politano, D Campi, M Cattelan, I Ben Amara, S Jaziri, A Mazzotti, ... Scientific reports 7 (1), 3445, 2017 | 79 | 2017 |
The advent of indium selenide: Synthesis, electronic properties, ambient stability and applications DW Boukhvalov, B Gürbulak, S Duman, L Wang, A Politano, LS Caputi, ... Nanomaterials 7 (11), 372, 2017 | 75 | 2017 |
Structural characterizations and optical properties of InSe and InSe: Ag semiconductors grown by Bridgman/Stockbarger technique B Gürbulak, M Şata, S Dogan, S Duman, A Ashkhasi, EF Keskenler Physica E: Low-dimensional Systems and Nanostructures 64, 106-111, 2014 | 67 | 2014 |
Liquid phase exfoliated indium selenide based highly sensitive photodetectors N Curreli, M Serri, D Spirito, E Lago, E Petroni, B Martín‐García, ... Advanced Functional Materials 30 (13), 1908427, 2020 | 66 | 2020 |
Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes S Doğan, S Duman, B Gürbulak, S Tüzemen, H Morkoc Physica E: Low-dimensional Systems and Nanostructures 41 (4), 646-651, 2009 | 66 | 2009 |
Enhanced electrocatalytic activity in GaSe and InSe nanosheets: the role of surface oxides G D'Olimpio, S Nappini, M Vorokhta, L Lozzi, F Genuzio, TO Menteş, ... Advanced Functional Materials 30 (43), 2005466, 2020 | 50 | 2020 |
The Urbach tails and optical absorption in layered semiconductor TlGaSe2 and TlGaS2 single crystals B Gürbulak, S Duman, A Ateş Czechoslovak Journal of Physics 55, 93-103, 2005 | 37 | 2005 |
Capacitance and conductance–frequency characteristics of Au–Sb/p-GaSe: Gd Schottky barrier diode S Duman, B Gürbulak, S Doğan, A Türüt Vacuum 85 (8), 798-801, 2011 | 36 | 2011 |
Temperature dependence of galvanomagnetic properties for Gd doped and undoped -type GaSe B Gürbulak, M Yildirim, S Tüzemen, H Efeoǧlu, YK Yoǧurtçu Journal of applied physics 83 (4), 2030-2034, 1998 | 34 | 1998 |
The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes S Duman, S Dogan, B Gürbulak, A Türüt Applied Physics A 91, 337-340, 2008 | 33 | 2008 |
Growth and optical properties of Dy doped and undoped n-type InSe single crystal B Gürbulak Solid state communications 109 (10), 665-669, 1999 | 33 | 1999 |
Mass attenuation coefficients for n-type InSe, InSe: Gd, InSe: Ho and InSe: Er single crystals O İçelli, S Erzeneoǧlu, B Gürbulak Journal of Quantitative Spectroscopy and Radiative Transfer 90 (3-4), 399-407, 2005 | 32 | 2005 |
Growth and temperature dependence of optical properties of Er doped and undoped n-Type InSe B Gürbulak, M Yildirim, A Ateş, S Doğan, YK Yoğurtçu Japanese journal of applied physics 38 (9R), 5133, 1999 | 32 | 1999 |
The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode A Sefaoğlu, S Duman, S Doğan, B Gürbulak, S Tüzemen, A Türüt Microelectronic engineering 85 (3), 631-635, 2008 | 31 | 2008 |
Fabrication and characterization of Al/Cu2ZnSnS4/n‐Si/Al heterojunction photodiodes G Turgut, EF Keskenler, S Aydın, S Doğan, S Duman, Ş Özçelik, ... physica status solidi (a) 211 (3), 580-586, 2014 | 30 | 2014 |
The optical investigation of TlGa0. 999Pr0. 001Se2 and TlGaSe2 single crystals B Gürbulak Physica B: Condensed Matter 293 (3-4), 289-296, 2001 | 30 | 2001 |
Electrothermal investigation of the switching effect in p-Type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors B Abay, B Gürbulak, M Yildirim, H Efeoglu, S Tuzemen, YK Yogurtçu Journal of electronic materials 25, 1054-1059, 1996 | 28 | 1996 |