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K.S. Chang-Liao
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Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics
N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma
Applied Physics Letters 112 (26), 2018
972018
Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma
Applied Physics Letters 102 (10), 2013
922013
Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition
H Ikeda, S Goto, K Honda, M Sakashita, A Sakai, S Zaima, Y Yasuda
Japanese journal of applied physics 41 (4S), 2476, 2002
522002
Charge-Trapping-Type Flash Memory Device With Stacked High- Charge-Trapping Layer
PH Tsai, KS Chang-Liao, TC Liu, TK Wang, PJ Tzeng, CH Lin, LS Lee, ...
IEEE electron device letters 30 (7), 775-777, 2009
482009
Novel SONOS-type nonvolatile memory device with optimal Al doping in HfAlO charge-trapping layer
PH Tsai, KS Chang-Liao, CY Liu, TK Wang, PJ Tzeng, CH Lin, LS Lee, ...
IEEE electron device letters 29 (3), 265-268, 2008
442008
Twin thin-film transistor nonvolatile memory with an indium–gallium–zinc–oxide floating gate
MF Hung, YC Wu, JJ Chang, KS Chang-Liao
IEEE Electron Device Letters 34 (1), 75-77, 2012
402012
Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate
CC Yang, SH Chen, JM Shieh, WH Huang, TY Hsieh, CH Shen, TT Wu, ...
2013 IEEE International Electron Devices Meeting, 29.6. 1-29.6. 4, 2013
392013
Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2Stack Gate Dielectric
CC Li, KS Chang-Liao, WF Chi, MC Li, TC Chen, TH Su, YW Chang, ...
IEEE Electron Device Letters 37 (1), 12-15, 2015
382015
Depth profiling of border traps in MOSFET with high-$ kappa $ gate dielectric by charge-pumping technique
CY Lu, KS Chang-Liao, PH Tsai, TK Wang
IEEE electron device letters 27 (10), 859-862, 2006
342006
Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption
CC Li, KS Chang-Liao, LJ Liu, TM Lee, CH Fu, TC Chen, JW Cheng, ...
IEEE electron device letters 35 (5), 509-511, 2014
332014
Monitoring the moisture-related degradation of ethylene propylene rubber cable by electrical and SEM methods
YT Hsu, KS Chang-Liao, TK Wang, CT Kuo
Polymer Degradation and Stability 91 (10), 2357-2364, 2006
332006
A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices
CH Fu, KS Chang-Liao, CC Li, ZH Ye, FM Hsu, TK Wang, YJ Lee, MJ Tsai
Applied Physics Letters 101 (3), 2012
302012
Correlation between mechanical and electrical properties for assessing the degradation of ethylene propylene rubber cables used in nuclear power plants
YT Hsu, KS Chang-Liao, TK Wang, CT Kuo
Polymer degradation and stability 92 (7), 1297-1303, 2007
282007
An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer
CH Fu, KS Chang-Liao, LJ Liu, CC Li, TC Chen, JW Cheng, CC Lu
IEEE Transactions on Electron Devices 61 (8), 2662-2667, 2014
272014
A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect
RCJ Wang, CC Lee, LD Chen, K Wu, KS Chang-Liao
Microelectronics Reliability 46 (9-11), 1673-1678, 2006
272006
A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric
CH Fu, KS Chang-Liao, YA Chang, YY Hsu, TH Tzeng, TK Wang, ...
Microelectronic engineering 88 (7), 1309-1311, 2011
262011
Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material
PJ Tzeng, YY Chang, KS Chang-Liao
IEEE Electron Device Letters 22 (11), 527-529, 2001
262001
Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices
CL Cheng, KS Chang-Liao, CH Huang, TK Wang
Applied Physics Letters 86 (21), 2005
252005
Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects
RCJ Wang, KS Chang-Liao, TK Wang, MN Chang, CS Wang, CH Lin, ...
Thin Solid Films 517 (3), 1230-1233, 2008
232008
Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide
KS Chang-Liao, HC Lai
Applied physics letters 72 (18), 2280-2282, 1998
231998
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