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Michael Bresnehan
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Direct synthesis of van der Waals solids
YC Lin, N Lu, N Perea-Lopez, J Li, Z Lin, X Peng, CH Lee, C Sun, ...
Acs Nano 8 (4), 3715-3723, 2014
3392014
Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices
JAR Michael S Bresnehan, Matthew J Hollander, Maxwell
ACS Nano 6 (6), 5234-5241, 2012
1582012
Prospects of direct growth boron nitride films as substrates for graphene electronics
MS Bresnehan, MJ Hollander, M Wetherington, K Wang, T Miyagi, ...
Journal of Materials Research 29 (3), 459-471, 2014
842014
Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films
MT Alam, MS Bresnehan, JA Robinson, MA Haque
Applied Physics Letters 104 (1), 2014
622014
800 Gbps fully integrated silicon photonics transmitter for data center applications
H Yu, D Patel, W Liu, Y Malinge, P Doussiere, W Lin, S Gupta, ...
Optical Fiber Communication Conference, M2D. 7, 2022
542022
Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers
MS Bresnehan, GR Bhimanapati, K Wang, DW Snyder, JA Robinson
ACS Applied Materials & Interfaces 6 (19), 16755-16762, 2014
262014
Heterogeneous integration of hexagonal boron nitride on bilayer quasi‐free‐standing epitaxial graphene and its impact on electrical transport properties
MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ...
physica status solidi (a) 210 (6), 1062-1070, 2013
212013
ACS Nano 8, 3715 (2014)
YC Lin, N Lu, N Perea-Lopez, J Li, Z Lin, X Peng, CH Lee, C Sun, ...
Crossref, ISI, 0
14
Investigation of graphene-based nanoscale radiation sensitive materials
JA Robinson, M Wetherington, Z Hughes, M LaBella III, M Bresnehan
Micro-and Nanotechnology Sensors, Systems, and Applications IV 8373, 135-143, 2012
62012
Synthesis and characterization of hexagonal boron nitride for integration with graphene electronics
MS Bresnehan
The Pennsylvania State University, 2013
32013
Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics
MS Bresnehan, MJ Hollander, RL Marucci, M LaBella, KA Trumbull, ...
Carbon Nanotubes, Graphene, and Associated Devices V 8462, 54-62, 2012
22012
Microwave plasma chemical vapor deposition of homoepitaxial diamond for MiP diodes: A study of reactor design, growth kinetics, and surface morphology
MS Bresnehan
22010
400Gbps Fully Integrated DR4 Silicon Photonics Transmitter for Data Center Applications
H Yu, P Doussiere, D Patel, W Lin, K Al-hemyari, J Park, C Jan, R Herrick, ...
Optical Fiber Communication Conference (OFC) 2020, 2020
2020
Heterogeneous integration of hexagonal boron nitride on bilayer quasi‐free‐standing epitaxial graphene and its impact on electrical transport properties (Phys. Status Solidi A …
MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ...
physica status solidi (a) 210 (6), 2013
2013
High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics
MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ...
70th Device Research Conference, 177-178, 2012
2012
Affects of Nitrogen Addition on the Growth Rate and Properties of MPCVD Diamond Films
MS Bresnehan
Pennsylvania State University, 2008
2008
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