| A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application J Guo, K Han, S Subhechha, X Duan, Q Chen, D Geng, S Huang, L Xu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2021 | 11 | 2021 |
| Analytical surface potential-based compact model for independent dual gate a-IGZO TFT J Guo, Y Zhao, G Yang, X Chuai, W Lu, D Liu, Q Chen, X Duan, S Huang, ... IEEE Transactions on Electron Devices 68 (4), 2049-2055, 2021 | 10 | 2021 |
| Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability J Guo, Y Sun, L Wang, X Duan, K Huang, Z Wang, J Feng, Q Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 9 | 2022 |
| Investigation of asymmetric characteristics of novel vertical channel-all-around (CAA) In-Ga-Zn-O field effect transistors Q Chen, L Wang, X Duan, J Guo, Z Wang, K Huang, J Feng, Y Sun, G Jiao, ... IEEE Electron Device Letters 43 (6), 894-897, 2022 | 9 | 2022 |
| A new surface potential based compact model for independent dual gate a-IGZO TFT: Experimental verification and circuit demonstration J Guo, Y Zhao, G Yang, X Chuai, W Lu, D Liu, Q Chen, X Duan, S Huang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2020 | 9 | 2020 |
| Geometric variability aware quantum potential based quasi-ballistic compact model for stacked 6 nm-thick silicon nanosheet GAA-FETs S Huang, Z Wu, H Xu, J Guo, L Xu, XL Duan, Q Chen, G Yang, Q Zhang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2021 | 7 | 2021 |
| A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization L Xu, J Guo, C Sun, Z Zheng, Y Xu, S Huang, K Han, W Wei, Z Guo, ... IEEE Electron Device Letters 44 (3), 412-415, 2023 | 3 | 2023 |
| Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory Y Ding, J An, J Shen, S Jia, J Guo, L Wang, T Gong, P Jiang, Y Wang, ... Advanced Electronic Materials 8 (12), 2200870, 2022 | 3 | 2022 |
| Reliability-Aware Ultra-Scaled IDG-InGaZnO-FET Compact Model to Enable Cross-layer Co-design for Highly Efficient Analog Computing in 2T0C-DRAM L Xu, K Chen, Z Li, J Guo, L Wang, Y Zhao, S Huang, Z Zhou, C Dou, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| A Universal Core Surface-Potential Modeling Methodology for Future Heterogeneous AOS/Si Co-integrated Design Y Zhao, J Guo, L Xu, S Huang, L Wang, L Li 2022 10th International Symposium on Next-Generation Electronics (ISNE), 1-3, 2023 | | 2023 |
| Using compact model to verify IGZO RO performance for engineering application Y Yong, J Liang, N Yang, DY Xiao, JP Jiang, JR Guo, LF Wang, D Geng, ... 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | | 2022 |
| Physics-based 2D analytical potential model with disorder effects for scaling a-IGZO TFT via dual material gate engineering S Huang, J Guo, L Xu, L Wang, L Li Japanese Journal of Applied Physics 61 (10), 104002, 2022 | | 2022 |
