A comparison of the degradation in RF performance due to device interconnects in advanced SiGe HBT and CMOS technologies RL Schmid, AÇ Ulusoy, S Zeinolabedinzadeh, JD Cressler IEEE Transactions on Electron Devices 62 (6), 1803-1810, 2015 | 63 | 2015 |
Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ... IEEE transactions on Nuclear Science 61 (6), 3218-3225, 2014 | 39 | 2014 |
A highly-efficient 138–170 GHz SiGe HBT frequency doubler for power-constrained applications C Coen, S Zeinolabedinzadeh, M Kaynak, B Tillack, JD Cressler 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 23-26, 2016 | 32 | 2016 |
Low standby power and robust FinFET based SRAM design B Ebrahimi, S Zeinolabedinzadeh, A Afzali-Kusha 2008 IEEE Computer Society Annual Symposium on VLSI, 185-190, 2008 | 28 | 2008 |
Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology S Zeinolabedinzadeh, P Song, M Kaynak, M Kamarei, B Tillack, ... 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014 | 27 | 2014 |
A 0.32-THz SiGe imaging array with polarization diversity Z Li, B Qi, X Zhang, S Zeinolabedinzadeh, L Sang, JD Cressler IEEE Transactions on Terahertz Science and Technology 8 (2), 215-223, 2018 | 22 | 2018 |
An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ... IEEE transactions on Nuclear Science 63 (1), 273-280, 2016 | 21 | 2016 |
A 314 GHz, fully-integrated SiGe transmitter and receiver with integrated antenna S Zeinolabedinzadeh, M Kaynak, W Khan, M Kamarei, B Tillack, ... 2014 IEEE Radio Frequency Integrated Circuits Symposium, 361-364, 2014 | 20 | 2014 |
Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ... IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018 | 16 | 2018 |
A 0.3–15 GHz SiGe LNA with> 1 THz gain-bandwidth product S Zeinolabedinzadeh, AÇ Ulusoy, MA Oakley, NE Lourenco, JD Cressler IEEE Microwave and Wireless Components Letters 27 (4), 380-382, 2017 | 16 | 2017 |
Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules I Ju, RL Schmid, MK Cho, S Zeinolabedinzadeh, M Mitchell, JD Cressler 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 14 | 2016 |
W-band SiGe power amplifiers P Song, AÇ Ulusoy, RL Schmid, SN Zeinolabedinzadeh, JD Cressler 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 151-154, 2014 | 13 | 2014 |
Single-event effects in high-frequency linear amplifiers: experiment and analysis S Zeinolabedinzadeh, H Ying, ZE Fleetwood, NJH Roche, A Khachatrian, ... IEEE transactions on Nuclear Science 64 (1), 125-132, 2016 | 12 | 2016 |
Single-event effects in a W-band (75-110 GHz) radar down-conversion mixer implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015 | 12 | 2015 |
Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian pulse generator F Inanlou, NE Lourenco, ZE Fleetwood, I Song, DC Howard, A Cardoso, ... IEEE transactions on Nuclear Science 61 (6), 3050-3054, 2014 | 12 | 2014 |
Magnetically actuated tunable soft electronics M Ilami, RJ Ahmed, D Edwards, E Thompson, S Zeinolabedinzadeh, ... ACS omega 4 (25), 21242-21250, 2019 | 11 | 2019 |
Digital spectrum twinning and the role of rfid and backscatter communications in spectral sensing GD Durgin, MA Varner, MA Weitnauer, J Cressler, MM Tentzeris, A Zajic, ... 2021 IEEE International Conference on RFID Technology and Applications (RFID …, 2021 | 9 | 2021 |
On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ... IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015 | 9 | 2015 |
Compact, low-power, single-ended and differential SiGe W-band LNAs F Inanlou, W Khan, P Song, S Zeinolabedinzadeh, RL Schmid, T Chi, ... 2014 9th European Microwave Integrated Circuit Conference, 452-455, 2014 | 9 | 2014 |
Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 8 | 2018 |