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Sukru ARDALI
Sukru ARDALI
Eskisehir Technical University
Verified email at eskisehir.edu.tr
Title
Cited by
Cited by
Year
Effective mass of electron in monolayer graphene: Electron-phonon interaction
E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ...
Journal of Applied Physics 113 (4), 2013
842013
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
O Celik, E Tiras, S Ardali, S Lisesivdin, E Ozbay
Open Physics 10 (2), 485-491, 2012
262012
Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
O Celik, E Tiras, S Ardali, SB Lisesivdin, E Ozbay
physica status solidi c 8 (5), 1625-1628, 2011
182011
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility
O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, F Nutku, Ç Cetinkaya, ...
Semiconductor Science and Technology 35 (2), 025009, 2020
162020
The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
S Ardali, G Atmaca, SB Lisesivdin, T Malin, V Mansurov, K Zhuravlev, ...
physica status solidi (b) 252 (9), 1960-1965, 2015
152015
Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures
HM Khalil, S Mazzucato, S Ardali, O Celik, S Mutlu, B Royall, E Tiras, ...
Materials Science and Engineering: B 177 (10), 729-733, 2012
152012
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
E Tiras, N Balkan, S Ardali, M Gunes, C Fontaine, A Arnoult
Philosophical Magazine 91 (4), 628-639, 2011
152011
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
E Tiras, O Celik, S Mutlu, S Ardali, SB Lisesivdin, E Ozbay
Superlattices and Microstructures 51 (6), 733-744, 2012
132012
Energy relaxation rates in AlInN/AlN/GaN heterostructures
E Tiras, S Ardali, E Arslan, E Ozbay
Journal of electronic materials 41, 2350-2361, 2012
112012
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
E Arslan, Ş Ardalı, E Tıraş, S Çakmakyapan, E Özbay
PhilosoPhical Magazine 97 (3), 187-200, 2017
102017
SiC Substrate effects on electron transport in the epitaxial graphene layer
E Arslan, S Cakmakyapan, Ö Kazar, S Bütün, SB Lişesivdin, NA Cinel, ...
Electronic Materials Letters 10, 387-391, 2014
102014
Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
E Tiras, M Tanisli, N Balkan, S Ardali, E Iliopoulos, A Georgakilas
physica status solidi (b) 249 (6), 1235-1240, 2012
102012
Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate
F Sonmez, E Arslan, S Ardali, E Tiras, E Ozbay
Journal of Alloys and Compounds, 2021
92021
Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering
E Tiras, S Ardali
physica status solidi (b) 250 (1), 134-146, 2013
92013
Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells
S Ardali, E Tiras
Physica E: Low-dimensional Systems and Nanostructures 47, 207-216, 2013
92013
Contactless electron effective mass determination in GaInNAs/GaAs quantum wells
E Tiras, S Ardali
The European Physical Journal B 86, 1-7, 2013
92013
Longitudinal polar optical phonons in InN/GaN single and double het‐erostructures
S Ardali, E Tiras, M Gunes, N Balkan, AO Ajagunna, E Iliopoulos, ...
physica status solidi c 8 (5), 1620-1624, 2011
82011
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, A Erol, J Puustinen, ...
Semiconductor Science and Technology 35 (9), 095038, 2020
72020
The effect of barrier layers on 2D electron effective mass in Al0. 3Ga0. 7N/AlN/GaN heterostructures
F Sonmez, S Ardali, SB Lisesivdin, T Malin, V Mansurov, K Zhuravlev, ...
Journal of Physics: Condensed Matter 33 (25), 255501, 2021
62021
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
G Atmaca, S Ardali, E Tiras, T Malin, VG Mansurov, KS Zhuravlev, ...
Solid-State Electronics 118, 12-17, 2016
62016
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