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Jidong Jin
Jidong Jin
Verified email at hanyang.ac.kr
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Year
Highly stable and conductive microcapsules for enhancement of joule heating performance
Z Zheng, J Jin, GK Xu, J Zou, U Wais, A Beckett, T Heil, S Higgins, L Guan, ...
ACS nano 10 (4), 4695-4703, 2016
842016
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50
C Brox-Nilsen, J Jin, Y Luo, P Bao, AM Song
IEEE Transactions on Electron Devices 60 (10), 3424-3429, 2013
542013
Room Temperature Processed Ultra High Frequency Indium Gallium Zinc Oxide Schottky Diode
J Zhang, H Wang, J Wilson, X Ma, J Jin, A Song
IEEE Electron Device Letters 37 (4), 389 - 392, 2016
442016
Compositional tuning of atomic layer deposited MgZnO for thin film transistors
JS Wrench, IF Brunell, PR Chalker, JD Jin, A Shaw, IZ Mitrovic, S Hall
Applied Physics Letters 105 (20), 2014
402014
Effects of annealing conditions on resistive switching characteristics of SnOx thin films
J Jin, J Zhang, RE Kemal, Y Luo, P Bao, M Althobaiti, D Hesp, VR Dhanak, ...
Journal of Alloys and Compounds 673, 54-59, 2016
242016
Atomic layer deposition of Nb-doped ZnO for thin film transistors
A Shaw, JS Wrench, JD Jin, TJ Whittles, IZ Mitrovic, M Raja, VR Dhanak, ...
Applied Physics Letters 109 (22), 2016
222016
Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases
JD Jin, Y Luo, P Bao, C Brox-Nilsen, R Potter, AM Song
Thin Solid Films 552, 192-195, 2014
222014
Enhancement of the electrical performance and bias stability of RF-sputtered indium tin zinc oxide thin-film transistors with vertical stoichiometric oxygen control
J Lee, J Jin, S Maeng, G Choi, H Kim, J Kim
ACS Applied Electronic Materials 4 (4), 1800-1806, 2022
152022
Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes
J Zhang, L Zhang, X Ma, J Wilson, J Jin, L Du, Q Xin, A Song
Applied Physics Letters 107 (9), 2015
152015
Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers
J Jin, L Wang, Z Zheng, J Zhang, X Hu, JR Lu, D Etor, C Pearson, A Song, ...
AIP Advances 9 (6), 2019
122019
Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
J Jin, JS Wrench, JT Gibbon, D Hesp, A Shaw, IZ Mitrovic, N Sedghi, ...
IEEE Transactions on Electron Devices 64 (3), 1225-1230, 2017
122017
Low-profile second-order terahertz bandpass frequency selective surface with sharp transitions
M Hussein, J Zhou, Y Huang, J Jin, C Balocco, RA Habeeb
2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz …, 2017
72017
A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
J Jin, J Zhang, A Shaw, VN Kudina, IZ Mitrovic, JS Wrench, PR Chalker, ...
Journal of Physics D: Applied Physics 51 (6), 065102, 2018
62018
Physical and electrical characterization of Mg-doped ZnO thin-film transistors
A Shaw, TJ Whittles, IZ Mitrovic, JD Jin, JS Wrench, D Hesp, VR Dhanak, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 206-209, 2015
62015
Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide
J Jin, X Lin, J Zhang, J Lee, Z Xiao, S Lee, J Kim
Advanced Electronic Materials 9 (3), 2201117, 2023
52023
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements
A Shaw, JD Jin, IZ Mitrovic, S Hall, JS Wrench, PR Chalker
Microelectronic Engineering 178, 213-216, 2017
52017
45th European Solid State Device Research Conference (ESSDERC)
A Shaw, T Whittles, I Mitrovic, J Jin, J Wrench, D Hesp, V Dhanak, ...
Grez, Austria 14, 206, 2015
52015
Unusual Sonochemical Assembly between Carbon Allotropes for High Strain-Tolerant Conductive Nanocomposites
Z Zheng, J Jin, JC Dong, B Li, GK Xu, JF Li, DG Shchukin
ACS nano 13 (10), 12062-12069, 2019
32019
Tribo-piezoelectric synergistic BaTiO3/PDMS micropyramidal structure for high-performance energy harvester and high-sensitivity tactile sensing
J Seong, BU Bak, D Lee, J Jin, J Kim
Nano Energy 122, 109264, 2024
12024
Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer
Z Xiao, J Jin, J Lee, G Choi, X Lin, J Zhang, J Kim
physica status solidi (a) 221 (2), 2300544, 2024
12024
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