Cristoloveanu, Sorin
Cristoloveanu, Sorin
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Frontiers of silicon-on-insulator
GK Celler, S Cristoloveanu
Journal of Applied Physics 93 (9), 4955-4978, 2003
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
F Balestra, S Cristoloveanu, M Benachir, J Brini, T Elewa
IEEE Electron Device Letters 8 (9), 410-412, 1987
Electrical characterization of silicon-on-insulator materials and devices
S Cristoloveanu, S Li
Springer Science & Business Media, 2013
Ultimately thin double-gate SOI MOSFETs
T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ...
IEEE transactions on electron devices 50 (3), 830-838, 2003
A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
S Cristoloveanu, D Munteanu, MST Liu
IEEE Transactions on Electron Devices 47 (5), 1018-1027, 2000
A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation
M Bawedin, S Cristoloveanu, D Flandre
IEEE Electron Device Letters 29 (7), 795-798, 2008
Silicon on insulator technologies and devices: from present to future
S Cristoloveanu
Solid-State Electronics 45 (8), 1403-1411, 2001
Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
T Ernst, C Tinella, C Raynaud, S Cristoloveanu
Solid-State Electronics 46 (3), 373-378, 2002
Lateral interband tunneling transistor in silicon-on-insulator
C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ...
Applied Physics Letters 84 (10), 1780-1782, 2004
Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers
S Cristoloveanu, S Williams
IEEE Electron Device Letters 13 (2), 102-104, 1992
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo
Solid-State Electronics 51 (2), 239-244, 2007
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
IEEE Electron Device Letters 33 (2), 179-181, 2011
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan, A Zaslavsky
IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 65, 226-233, 2011
High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure
KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee
IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013
Coupling effects and channels separation in FinFETs
F Daugé, J Pretet, S Cristoloveanu, A Vandooren, L Mathew, J Jomaah, ...
Solid-State Electronics 48 (4), 535-542, 2004
Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling
J Pretet, S Monfray, S Cristoloveanu, T Skotnicki
IEEE Transactions on Electron Devices 51 (2), 240-245, 2004
Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs
F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009
Total ionizing dose effects on triple-gate FETs
M Gaillardin, P Paillet, V Ferlet-Cavrois, O Faynot, C Jahan, ...
IEEE Transactions on Nuclear Science 53 (6), 3158-3165, 2006
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