| Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures HG Çetinkaya, H Tecimer, H Uslu, Ş Altındal Current Applied Physics 13 (6), 1150-1156, 2013 | 77 | 2013 |
| Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures S Demirezen, HG Çetinkaya, M Kara, F Yakuphanoğlu, Ş Altındal Sensors and Actuators A: Physical 317, 112449, 2021 | 75 | 2021 |
| Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol … HG Çetinkaya, Ş Altındal, I Orak, I Uslu Journal of Materials Science: Materials in Electronics 28, 7905-7911, 2017 | 42 | 2017 |
| The fabrication of Al/p-Si (MS) type photodiode with (% 2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics HG Çetinkaya, Ö Sevgili, Ş Altındal Physica B: Condensed Matter 560, 91-96, 2019 | 38 | 2019 |
| Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy … HG Çetinkaya, S Alialy, Ş Altındal, A Kaya, I Uslu Journal of Materials Science: Materials in Electronics 26, 3186-3195, 2015 | 37 | 2015 |
| Electrical parameters of Au/(% 1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes HG Çetinkaya, S Demirezen, SA Yerişkin Physica B: Condensed Matter 621, 413207, 2021 | 30 | 2021 |
| On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0. 001Ox)/n-Si structure E Marıl, A Kaya, HG Çetinkaya, S Koçyiğit, Ş Altındal Materials Science in Semiconductor Processing 39, 332-338, 2015 | 30 | 2015 |
| Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide … S Demirezen, HG Çetinkaya, Ş Altındal Silicon 14 (14), 8517-8527, 2022 | 28 | 2022 |
| Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal Journal of Alloys and Compounds 728, 896-901, 2017 | 26 | 2017 |
| On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in … HG Çetinkaya, DE Yıldız, Ş Altındal International Journal of Modern Physics B 29 (01), 1450237, 2015 | 20 | 2015 |
| Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal Journal of Alloys and Compounds 721, 750-756, 2017 | 19 | 2017 |
| Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage HG Çetinkaya, A Kaya, Ş Altındal, S Koçyiğit Canadian Journal of Physics 93 (10), 1213-1220, 2015 | 19 | 2015 |
| Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact HG Çetinkaya, O Çiçek, Ş Altındal, Y Badali, S Demirezen IEEE Sensors Journal 22 (23), 22391-22397, 2022 | 17 | 2022 |
| A comparative study on the electrical parameters of - Schottky diodes with and without interfacial layer A Kaya, HG Çetinkaya, Ş Altındal, I Uslu International Journal of Modern Physics B 30 (16), 1650090, 2016 | 17 | 2016 |
| Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method Y Şafak Asar, A Feizollahi Vahid, N Basman, HG Çetinkaya, Ş Altındal Applied Physics A 129 (5), 358, 2023 | 11 | 2023 |
| On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu: DLC)/p-Si/Au Schottky diodes (SDs) HG Cetinkaya, A Feizollahi Vahid, N Basman, S Demirezen, Y Şafak Asar, ... Journal of Materials Science: Materials in Electronics 34 (9), 822, 2023 | 11 | 2023 |
| The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate … S Demirezen, A Arslan Alsaç, HG Cetinkaya, Ş Altındal Journal of Materials Science: Materials in Electronics 34 (14), 1186, 2023 | 10 | 2023 |
| Frequency and voltage dependent profile of dielectric parameters and electric modulus for Al/(HgS-PVA)/p-Si capacitor via impedance spectroscopy method HG Çetinkaya Journal of Nanoelectronics and Optoelectronics 13 (3), 421-427, 2018 | 8 | 2018 |
| git and $ c S. Altindal E Maril, A Kaya, HG Çetinkaya, S Koçyi Mater. Sci. Semicond. Process 39, 332, 2015 | 4 | 2015 |
| Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications S Demirezen, A Dere, HG Çetinkaya, AG Al-Sehemi, AA Al-Ghamdi, ... Physica Scripta 98 (11), 115916, 2023 | 2 | 2023 |
