| Sub-60mV-swing negative-capacitance FinFET without hysteresis KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ... 2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015 | 355 | 2015 |
| Physical thickness 1. x nm ferroelectric HfZrOx negative capacitance FETs MH Lee, ST Fan, CH Tang, PG Chen, YC Chou, HH Chen, JY Kuo, MJ Xie, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2016 | 186 | 2016 |
| Prospects for ferroelectric HfZrOx FETs with experimentally CET= 0.98 nm, SSfor= 42mV/dec, SSrev= 28mV/dec, switch-off< 0.2 V, and hysteresis-free strategies MH Lee, PG Chen, C Liu, KY Chu, CC Cheng, MJ Xie, SN Liu, JW Lee, ... 2015 IEEE international electron devices meeting (IEDM), 22.5. 1-22.5. 4, 2015 | 145 | 2015 |
| Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition H Li, TF Wu, A Rahimi, KS Li, M Rusch, CH Lin, JL Hsu, MM Sabry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2016 | 140 | 2016 |
| Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications KT Chen, HY Chen, CY Liao, GY Siang, C Lo, MH Liao, KS Li, ST Chang, ... IEEE Electron Device Letters 40 (3), 399-402, 2019 | 86 | 2019 |
| Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing H Li, KS Li, CH Lin, JL Hsu, WC Chiu, MC Chen, TT Wu, J Sohn, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 79 | 2016 |
| Utilizing sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication KS Li, CH Ho, MT Lee, MC Chen, CL Hsu, JM Lu, CH Lin, CC Chen, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 61 | 2014 |
| TMD FinFET with 4 nm thin body and back gate control for future low power technology MC Chen, KS Li, LJ Li, AY Lu, MY Li, YH Chang, CH Lin, YJ Chen, ... 2015 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2015 | 46 | 2015 |
| Extremely steep switch of negative-capacitance nanosheet GAA-FETs and FinFETs MH Lee, KT Chen, CY Liao, SS Gu, GY Siang, YC Chou, HY Chen, J Le, ... 2018 IEEE International Electron Devices Meeting (IEDM), 31.8. 1-31.8. 4, 2018 | 45 | 2018 |
| Ferroelectric Al:HfO2negative capacitance FETs MH Lee, PG Chen, ST Fan, YC Chou, CY Kuo, CH Tang, HH Chen, ... 2017 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2017 | 44 | 2017 |
| Organic spin valves with inelastic tunneling characteristics KS Li, YM Chang, S Agilan, JY Hong, JC Tai, WC Chiang, K Fukutani, ... Physical Review B 83 (17), 172404, 2011 | 39 | 2011 |
| Low-cost and TSV-free monolithic 3D-IC with heterogeneous integration of logic, memory and sensor analogy circuitry for Internet of Things TT Wu, CH Shen, JM Shieh, WH Huang, HH Wang, FK Hsueh, HC Chen, ... 2015 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2015 | 38 | 2015 |
| Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors YW Lan, PC Chen, YY Lin, MY Li, LJ Li, YL Tu, FL Yang, MC Chen, KS Li Nanoscale Horizons 4 (3), 683-688, 2019 | 35 | 2019 |
| MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability KS Li, BW Wu, LJ Li, MY Li, CCK Cheng, CL Hsu, CH Lin, YJ Chen, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 34 | 2016 |
| First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate CC Cheng, YY Chung, UY Li, CT Lin, CF Li, JH Chen, TY Lai, KS Li, ... 2019 Symposium on VLSI Technology, T244-T245, 2019 | 33 | 2019 |
| First fully functionalized monolithic 3D+ IoT chip with 0.5 V light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM FK Hsueh, CH Shen, JM Shieh, KS Li, HC Chen, WH Huang, HH Wang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2016 | 30 | 2016 |
| Negative-capacitance FinFET inverter, ring oscillator, SRAM cell, and Ft KS Li, YJ Wei, YJ Chen, WC Chiu, HC Chen, MH Lee, YF Chiu, FK Hsueh, ... 2018 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2018 | 26 | 2018 |
| Interfacial spectroscopic characterization of organic/ferromagnet hetero-junction of 3, 4, 9, 10-perylene-teracarboxylic dianhydride-based organic spin valves JY Hong, KH Ou Yang, BY Wang, KS Li, HW Shiu, CH Chen, YL Chan, ... Applied Physics Letters 104 (8), 2014 | 21 | 2014 |
| Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative … MH Lee, KT Chen, CY Liao, GY Siang, C Lo, HY Chen, YJ Tseng, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2019 | 19 | 2019 |
| Monolithic 3D SRAM-CIM macro fabricated with BEOL gate-all-around MOSFETs FK Hsueh, CY Lee, CX Xue, CH Shen, JM Shieh, BY Chen, YC Chiu, ... 2019 IEEE International Electron Devices Meeting (IEDM), 3.3. 1-3.3. 4, 2019 | 18 | 2019 |
