Takip et
Giovanni Alfieri
Giovanni Alfieri
Hitachi Energy
hitachienergy.com üzerinde doğrulanmış e-posta adresine sahip
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Iron and intrinsic deep level states in Ga2O3
ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ...
Applied Physics Letters 112 (4), 2018
2592018
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...
Apl Materials 7 (2), 2019
196*2019
Annealing behavior between room temperature and 2000 C of deep level defects in electron-irradiated n-type 4H silicon carbide
G Alfieri, EV Monakhov, BG Svensson, MK Linnarsson
Journal of applied physics 98 (4), 2005
1442005
Electrically active defects in irradiated 4H-SiC
ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ...
Journal of applied physics 95 (9), 4728-4733, 2004
942004
Detection and depth analyses of deep levels generated by ion implantation in n-and p-type 4H-SiC
K Kawahara, G Alfieri, T Kimoto
Journal of Applied Physics 106 (1), 2009
922009
Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon
M Mikelsen, EV Monakhov, G Alfieri, BS Avset, BG Svensson
Physical Review B 72 (19), 195207, 2005
852005
Evidence for identification of the divacancy-oxygen center in Si
G Alfieri, EV Monakhov, BS Avset, BG Svensson
Physical Review B 68 (23), 233202, 2003
672003
Development of radiation tolerant semiconductor detectors for the Super-LHC
M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Radiation-hard semiconductor detectors for SuperLHC
M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide
G Alfieri, EV Monakhov, BG Svensson, A Hallén
Journal of applied physics 98 (11), 2005
582005
Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC
S Sasaki, K Kawahara, G Feng, G Alfieri, T Kimoto
Journal of Applied Physics 109 (1), 2011
512011
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
E Fretwurst, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
482005
Engineering the band gap of SiC nanotubes with a transverse electric field
G Alfieri, T Kimoto
Applied Physics Letters 97 (4), 2010
442010
Bistable defect in mega-electron-volt proton implanted 4H silicon carbide
DM Martin, H Kortegaard Nielsen, P Leveque, A Hallén, G Alfieri, ...
Applied physics letters 84 (10), 1704-1706, 2004
442004
Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
G Alfieri, T Kimoto
Applied Physics Letters 102 (15), 2013
362013
Divacancy annealing in Si: Influence of hydrogen
EV Monakhov, A Ulyashin, G Alfieri, AY Kuznetsov, BS Avset, ...
Physical Review B 69 (15), 153202, 2004
362004
Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC
G Alfieri, T Kimoto
Journal of Applied Physics 112, 063717, 2012
342012
Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ...
Materials Science Forum 897, 755-758, 2017
292017
The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study
G Alfieri, T Kimoto
Nanotechnology 20 (28), 285703, 2009
242009
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
R Nipoti, A Carnera, G Alfieri, L Kranz
Materials Science Forum 924, 333-338, 2018
222018
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