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Sajad A Loan
Sajad A Loan
Professor of Electronics Engineering, Jamia Millia Islamia New Delhi
Verified email at jmi.ac.in - Homepage
Title
Cited by
Cited by
Year
A novel partial-ground-plane-based MOSFET on selective buried oxide: 2-D simulation study
SA Loan, S Qureshi, SSK Iyer
IEEE Transactions on Electron Devices 57 (3), 671-680, 2010
1152010
A high-performance inverted-C tunnel junction FET with source–channel overlap pockets
SA Loan, M Rafat
IEEE Transactions on Electron Devices 65 (2), 763-768, 2018
782018
Drain-engineered TFET with fully suppressed ambipolarity for high-frequency application
MRU Shaikh, SA Loan
IEEE Transactions on Electron Devices 66 (4), 1628-1634, 2019
772019
A high-performance source engineered charge plasma-based Schottky MOSFET on SOI
F Bashir, SA Loan, M Rafat, ARM Alamoud, SA Abbasi
IEEE Transactions on Electron Devices 62 (10), 3357-3364, 2015
712015
A high performance gate engineered charge plasma based tunnel field effect transistor
F Bashir, SA Loan, M Rafat, ARM Alamoud, SA Abbasi
Journal of Computational Electronics 14 (2), 477-485, 2015
582015
Dielectrically modulated source-engineered charge-plasma-based Schottky-FET as a label-free biosensor
SA Hafiz, M Ehteshamuddin, SA Loan
IEEE Transactions on Electron Devices 66 (4), 1905-1910, 2019
542019
A high performance charge plasma based lateral bipolar transistor on selective buried oxide
SA Loan, F Bashir, M Rafat, AR Alamoud, SA Abbasi
Semiconductor Science and Technology 29 (1), 015011, 2013
492013
Planar junctionless silicon-on-insulator transistor with buried metal layer
M Ehteshamuddin, SA Loan, M Rafat
IEEE Electron Device Letters 39 (6), 799-802, 2018
422018
Design and comparative analysis of high performance carbon nanotube-based operational transconductance amplifiers
SA Loan, M Nizamuddin, AR Alamoud, SA Abbasi
Nano 10 (03), 1550039, 2015
382015
Electrostatically doped DSL Schottky barrier MOSFET on SOI for low power applications
F Bashir, AG Alharbi, SA Loan
IEEE Journal of the Electron Devices Society 6, 19-25, 2017
342017
A vertical-gaussian doped soi-tfet with enhanced dc and analog/rf performance
M Ehteshamuddin, SA Loan, M Rafat
Semiconductor Science and Technology 33 (7), 075016, 2018
322018
Design, simulation and comparative analysis of CNT based cascode operational transconductance amplifiers
M Nizamuddin, SA Loan, AR Alamoud, SA Abbassi
Nanotechnology 26 (39), 395201, 2015
302015
Investigating a dual MOSCAP variant of line-TFET with improved vertical tunneling incorporating FIQC effect
M Ehteshamuddin, SA Loan, AG Alharbi, AM Alamoud, M Rafat
IEEE Transactions on Electron Devices 66 (11), 4638-4645, 2019
282019
VLSI Architecture of Fuzzy Logic Hardware Implementation: a Review.
AM Murshid, SA Loan, SA Abbasi, ARM Alamoud
International Journal of Fuzzy Systems 13 (2), 2011
282011
Design and Simulation of High Performance Carbon Nanotube Based Three Stage Operational Amplifiers
ARMA M. Nizamuddina, Sajad A. Loana, Shuja A. Abbasib
Materials Today: Proceedings 3 (2), 449-453, 2016
242016
A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator
SA Loan, F Bashir, M Rafat, ARM Alamoud, SA Abbasi
Semiconductor Science and Technology 29 (9), 095001, 2014
232014
Insights into the impact of pocket and source elevation in vertical gate elevated source tunnel FET structures
SA Loan, M Rafat
IEEE Transactions on Electron Devices 66 (1), 752-758, 2018
222018
Ambipolar leakage suppression in electron–hole bilayer TFET: Investigation and analysis
Ashita, SA Loan, AG Alharbi, M Rafat
Journal of Computational Electronics 17, 977-985, 2018
222018
A novel double gate metal source/drain Schottky MOSFET as an inverter
SA Loan, S Kumar, AM Alamoud
Superlattices and Microstructures 91, 78-89, 2016
212016
Design of a novel high gain carbon nanotube based operational transconductance amplifier
SA Loan, M Nizamuddin, F Bashir, H Shabir, AM Murshid, AR Alamoud, ...
Proceedings of the international multiconference of engineers and computer …, 2014
212014
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