| Electrical properties of TiO2 thin films A Yildiz, SB Lisesivdin, M Kasap, D Mardare Journal of Non-Crystalline Solids 354 (45-46), 4944-4947, 2008 | 165 | 2008 |
| The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... New Journal of Physics 11, 063031, 2009 | 93 | 2009 |
| The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates E Arslan, S Bütün, SB Lisesivdin, M Kasap, S Ozcelik, E Ozbay Journal of Applied Physics 103 (10), 2008 | 92 | 2008 |
| Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method SB Lisesivdin, A Yildiz, N Balkan, M Kasap, S Ozcelik, E Ozbay Journal of Applied Physics 108 (1), 013712-013712-7, 2010 | 91 | 2010 |
| Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0. 25Ga0. 75N/GaN heterostructures SB Lisesivdin, S Acar, M Kasap, S Ozcelik, S Gokden, E Ozbay Semiconductor science and technology 22, 543, 2007 | 84 | 2007 |
| Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film A Yildiz, SB Lisesivdin, M Kasap, D Mardare Physica B: Condensed Matter 404 (8-11), 1423-1426, 2009 | 71 | 2009 |
| High Figure-of-Merit ( / ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier JH Lee, JM Ju, G Atmaca, JG Kim, SH Kang, YS Lee, SH Lee, JW Lim, ... IEEE Journal of the Electron Devices Society 6, 1179-1186, 2018 | 44 | 2018 |
| Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel S Gökden, R Tülek, A Teke, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... Semiconductor science and technology 25 (4), 045024, 2010 | 41 | 2010 |
| Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis SB Lisesivdin, A Yildiz, S Acar, M Kasap, S Ozcelik, E Ozbay Applied Physics Letters 91 (10), 102113-102113-3, 2007 | 41 | 2007 |
| High temperature variable-range hopping conductivity in undoped TiO2 thin film A Yildiz, SB Lisesivdin, M Kasap, D Mardare NATL INST OPTOELECTRONICS, 2007 | 41 | 2007 |
| Electronic transport in n-and p-type modulation dopedGaxIn1− xNyAs1− y/GaAs quantum wells Y Sun, N Balkan, M Aslan, SB Lisesivdin, H Carrere, MC Arikan, X Marie Journal of Physics: Condensed Matter 21 (17), 174210, 2009 | 38 | 2009 |
| Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures SB Lisesivdin, N Balkan, O Makarovsky, A Patane, A Yildiz, MD Caliskan, ... Journal of Applied Physics 105 (9), 093701-093701-6, 2009 | 37 | 2009 |
| Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition S Acar, SB Lisesivdin, M Kasap, S Özçelik, E Özbay Thin Solid Films 516 (8), 2041-2044, 2008 | 37 | 2008 |
| An atomistic study on the stretching of nanowires H Mehrez, S Ciraci, CY Fong, S Erkoc Journal of Physics: Condensed Matter 9 (49), 10843, 1997 | 36 | 1997 |
| First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons AF Kuloglu, B Sarikavak-Lisesivdin, SB Lisesivdin, E Ozbay Computational materials science 68, 18-22, 2013 | 29 | 2013 |
| Growth parameter investigation of Al0. 25Ga0. 75N/GaN/AlN heterostructures with Hall effect measurements SB Lisesivdin, S Demirezen, MD Caliskan, A Yildiz, M Kasap, S Ozcelik, ... Semiconductor Science and Technology 23, 095008, 2008 | 29 | 2008 |
| Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors SB Lisesivdin, A Yildiz, M Kasap NATL INST OPTOELECTRONICS, 2007 | 29 | 2007 |
| Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN O Celik, E Tiras, S Ardali, SB Lisesivdin, E Ozbay Central European Journal of Physics 10, 485-491, 2012 | 27 | 2012 |
| Stokes shift and band gap bowing in InxGa1-xN (0.060<= x<= 0.105) grown by metalorganic vapour phase epitaxy A Yildiz, F Dagdelen, S Acar, SB Lisesivdin, M Kasap, Y Aydogdu, M Bosi POLISH ACAD SCIENCES INST PHYSICS, 2008 | 26 | 2008 |
| Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms E Kutlu, P Narin, SB Lisesivdin, E Ozbay Philosophical magazine 98 (2), 155-164, 2018 | 25 | 2018 |
Ekmel OzbayProfessor, Bilkent University, Ankara, TURKEYVerified email at bilkent.edu.tr
