Chee Hing Tan
Chee Hing Tan
sheffield.ac.uk üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ Marshall, DJ Massey, JS Ng, CH Tan, M Hopkinson, ...
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
802007
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 111107, 2008
752008
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
672006
Avalanche noise measurement in thin Si diodes
CH Tan, JC Clark, JPR David, GJ Rees, SA Plimmer, RC Tozer, ...
Applied Physics Letters 76 (26), 3926-3928, 2000
672000
Avalanche noise characteristics in submicron InP diodes
LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
612008
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
602010
Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes
CH Tan, JPR David, SA Plimmer, GJ Rees, RC Tozer, R Grey
IEEE Transactions on Electron Devices 48 (7), 1310-1317, 2001
572001
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
552002
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As
JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
542003
Temperature dependence of leakage current in InAs avalanche photodiodes
PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
532011
Impact ionization in InAs electron avalanche photodiodes
ARJ Marshall, JPR David, CH Tan
IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010
522010
Extremely low excess noise in InAs electron avalanche photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
IEEE Photonics Technology Letters 21 (13), 866-868, 2009
512009
Material considerations for avalanche photodiodes
JPR David, CH Tan
IEEE Journal of selected topics in quantum electronics 14 (4), 998-1009, 2008
502008
Demonstration of InAsBi photoresponse beyond 3.5 μm
IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 171109, 2014
452014
Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end
KS Lau, CH Tan, BK Ng, KF Li, RC Tozer, JPR David, GJ Rees
Measurement science and technology 17 (7), 1941, 2006
452006
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
442011
Temperature dependence of AlGaAs soft X-ray detectors
AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
402010
Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
ARJ Marshall, P Vines, PJ Ker, JPR David, CH Tan
IEEE Journal of Quantum Electronics 47 (6), 858-864, 2011
392011
Fabrication of InAs photodiodes with reduced surface leakage current
ARJ Marshall, CH Tan, JPR David, JS Ng, M Hopkinson
Optical Materials in Defence Systems Technology IV 6740, 67400H, 2007
372007
1300 nm wavelength InAs quantum dot photodetector grown on silicon
I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu
Optics express 20 (10), 10446-10452, 2012
322012
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Makaleler 1–20