Matteo Bosi

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Citations	3953	2769
h-index	32	25
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Roberto FornariProfessor of Physics, University of Parma, ItalyVerified email at unipr.it
Luca SeravalliIMEM-CNR Institute, Parma, ItalyVerified email at imem.cnr.it
Francesca RossiSenior Researcher, IMEM-CNR, Parma, ItalyVerified email at imem.cnr.it
Filippo FabbriIstituto di Nanoscienze, CNR NANOVerified email at nano.cnr.it
Giancarlo SalviatiDirector of Research Associated, Oversea Professor, Project leader, IMEM-CNRVerified email at cnr.it
Francesco MezzadriUniversità degli studi di ParmaVerified email at unipr.it
Marco NegriInfineon TechnologiesVerified email at infineon.com
Francesco BoschiResearcher, Custom S.p.A.Verified email at custom.it
Pecz BEnergy Research Centre, MFA, Thin Film PhysicsVerified email at mfa.kfki.hu
Bernard WattsIMM-BolognaVerified email at cnr.it
Elisa BuffagniVerified email at imem.cnr.it
Piero MazzoliniPostdoctoral fellow at Paul Drude Institute for Solid State Electronics, BerlinVerified email at pdi-berlin.de
Musayeva Nahida NazimHead of dep. Application Technologies of Nanomaterials, leading Scientific researcher, AssociateVerified email at physics.science.az
Joice Sophia PonrajDirector & ADI Researcher, Aaivalayam Dynamic Integrated Research Academy and CorporationsVerified email at aaivalayam.com
Sergii GolovynskyiCollege of Optoelectronic Engineering, Shenzhen UniversityVerified email at szu.edu.cn
Maura PavesiDept. of Marhematical, Physical and Computer Sciences - Univ.of Parma ITALYVerified email at unipr.it
Baikui LiShenzhen UniversityVerified email at szu.edu.cn
roberto verucchiIMEM-CNR, sede di TrentoVerified email at cnr.it
Mehmet KASAPSteuerberater / CPAVerified email at mehmetkasap.com.tr
Oscar Martínez SacristánGdS-Optronlab group. Dpto. Física Materia Condensada. Universidad de ValladolidVerified email at fmc.uva.es

Matteo Bosi

IMEM - CNR, Area delle Scienze 37A, 43124 Parma, Italy

Verified email at imem.cnr.it - Homepage

Ga2O3 nanowires germanium Silicon Carbide


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The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017	322	2017
The potential of III‐V semiconductors as terrestrial photovoltaic devices M Bosi, C Pelosi Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007	268	2007
Crystal Structure and Ferroelectric Properties of ε-Ga₂O₃ Films Grown on (0001)-Sapphire F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari Inorganic chemistry 55 (22), 12079-12084, 2016	251	2016
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari Journal of Crystal Growth 443, 25-30, 2016	191	2016
Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review M Bosi RSC Advances 5 (92), 75500-75518, 2015	172	2015
Review on atomic layer deposition and applications of oxide thin films JS Ponraj, G Attolini, M Bosi Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013	135	2013
Germanium: Epitaxy and its applications M Bosi, G Attolini Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010	128	2010
Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017	121	2017
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions M Bosi, P Mazzolini, L Seravalli, R Fornari Journal of Materials Chemistry C 8 (32), 10975-10992, 2020	120	2020
Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ... Applied Surface Science 515, 146033, 2020	118	2020
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018	116	2018
A study of Indium incorporation efficiency in InGaN grown by MOVPE M Bosi, R Fornari Journal of Crystal Growth 265 (3-4), 434-439, 2004	80	2004
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ... Applied Physics Letters 108 (2), 2016	78	2016
In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3 I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik, B Pécz Acta Materialia 183, 216-227, 2020	75	2020
The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 2019	68	2019
Si and Sn doping of ε-Ga2O3 layers A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ... APL Materials 7 (3), 2019	54	2019
Probing the nanoscale light emission properties of a CVD-grown MoS 2 monolayer by tip-enhanced photoluminescence Y Okuno, O Lancry, A Tempez, C Cairone, M Bosi, F Fabbri, M Chaigneau Nanoscale 10 (29), 14055-14059, 2018	52	2018
Integration of single-photon emitters into 3C-SiC microdisk resonators A Lohrmann, TJ Karle, VK Sewani, A Laucht, M Bosi, M Negri, ... ACS Photonics 4 (3), 462-468, 2017	50	2017
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors S Leone, R Fornari, M Bosi, V Montedoro, L Kirste, P Doering, ... Journal of Crystal Growth 534, 125511, 2020	47	2020
Synthesis and characterization of 3C–SiC nanowires G Attolini, F Rossi, M Bosi, BE Watts, G Salviati Journal of Non-Crystalline Solids 354 (47-51), 5227-5229, 2008	47	2008

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