Ting-Hsiang Hung
Ting-Hsiang Hung
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Cited by
Cited by
Year
A first-principles study of nitrogen-and boron-assisted platinum adsorption on carbon nanotubes
YH Li, TH Hung, CW Chen
Carbon 47 (3), 850-855, 2009
1762009
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan
Applied Physics Letters 99 (13), 133503, 2011
1612011
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ...
Applied Physics Letters 102 (7), 072105, 2013
752013
Interface charge engineering for enhancement-mode GaN MISHEMTs
TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan
IEEE Electron Device Letters 35 (3), 312-314, 2014
672014
Interfacial charge effects on electron transport in III-nitride metal insulator semiconductor transistors
TH Hung, M Esposto, S Rajan
Applied Physics Letters 99 (16), 162104, 2011
552011
Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
S Bajaj, TH Hung, F Akyol, D Nath, S Rajan
Applied Physics Letters 105 (26), 263503, 2014
482014
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
Applied Physics Letters 107 (15), 153504, 2015
452015
A 7nm CMOS technology platform for mobile and high performance compute application
S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017
312017
Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors
J Yang, S Cui, TP Ma, TH Hung, D Nath, S Krishnamoorthy, S Rajan
Applied Physics Letters 103 (22), 223507, 2013
142013
Surface plasmon on aluminum concentric rings arranged in a long-range periodic structure
YT Chang, DC Tzuang, YT Wu, CF Chan, YH Ye, TH Hung, YF Chen, ...
Applied Physics Letters 92 (25), 253111, 2008
142008
A study of electrically active traps in AlGaN/GaN high electron mobility transistor
J Yang, S Cui, TP Ma, TH Hung, D Nath, S Krishnamoorthy, S Rajan
Applied Physics Letters 103 (17), 173520, 2013
132013
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes
V Di Lecce, S Krishnamoorthy, M Esposto, TH Hung, A Chini, S Rajan
Electronics letters 48 (6), 347-348, 2012
132012
Characterization of a dielectric/GaN system using atom probe tomography
B Mazumder, M Esposto, TH Hung, T Mates, S Rajan, JS Speck
Applied Physics Letters 103 (15), 151601, 2013
82013
Determination of trap energy levels in AlGaN/GaN HEMT
J Yang, S Cui, TP Ma, TH Hung, D Nath, S Krishnamoorthy, S Rajan
71st Device Research Conference, 79-80, 2013
52013
Simulation of Enhancement Mode GaN HEMTs with Threshold> 5 V using P-type Buffer
S Bajaj, F Akyol, S Krishnamoorthy, TH Hung, S Rajan
arXiv preprint arXiv:1511.04438, 2015
22015
Power switching transistors based on GaN and AlGaN channels
S Bajaj, TH Hung, F Akyol, S Krishnamoorthy, S Khandaker, A Armstrong, ...
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
22015
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
arXiv preprint arXiv:1508.07050, 2015
2015
Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
2015 73rd Annual Device Research Conference (DRC), 33-34, 2015
2015
Novel High-k Dielectric Enhanced III-Nitride Devices
TH Hung
The Ohio State University, 2015
2015
Lateral energy band engineering of Al2O3/III-nitride interfaces
TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Bajaj, S Rajan
72nd Device Research Conference, 131-132, 2014
2014
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Articles 1–20