John D. Cressler
John D. Cressler
Professor of Electrical and Computer Engineering, Georgia Tech
Verified email at - Homepage
Cited by
Cited by
Silicon-germanium heterojunction bipolar transistors
JD Cressler, G Niu
Artech house, 2003
SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications
JD Cressler
IEEE Transactions on Microwave Theory and techniques 46 (5), 572-589, 1998
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
DL Harame, JH Comfort, JD Cressler, EF Crabbe, JYC Sun, BS Meyerson, ...
IEEE Transactions on Electron Devices 42 (3), 455-468, 1995
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
DL Harame, JH Comfort, JD Cressler, EF Crabbe, JYC Sun, BS Meyerson, ...
IEEE Transactions on Electron Devices 42 (3), 469-482, 1995
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler
CRC press, 2018
On the potential of SiGe HBTs for extreme environment electronics
JD Cressler
Proceedings of the IEEE 93 (9), 1559-1582, 2005
Technology options for extreme environment electronics
JA Pellish, LM Cohn
GaN 900, 600, 2013
Record maximum oscillation frequency in C-face epitaxial graphene transistors
Z Guo, R Dong, PS Chakraborty, N Lourenco, J Palmer, Y Hu, M Ruan, ...
Nano letters 13 (3), 942-947, 2013
Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end
R Mukhopadhyay, Y Park, P Sen, N Srirattana, J Lee, CH Lee, S Nuttinck, ...
IEEE Transactions on Microwave Theory and Techniques 53 (1), 81-93, 2005
International electron devices meeting
K Kim, SH Lee, SJ Choi, HB Park, YD Seo, KH Chin, D Kim, JS Lim, ...
IEDM Technical Digest 323, 2005
Half-terahertz operation of SiGe HBTs
R Krithivasan, Y Lu, JD Cressler, JS Rieh, MH Khater, D Ahlgren, ...
IEEE electron device letters 27 (7), 567-569, 2006
On the profile design and optimization of epitaxial Si-and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
JD Cressler, JH Comfort, EF Crabbe, GL Patton, JMC Stork, JYC Sun, ...
IEEE Transactions on Electron Devices 40 (3), 525-541, 1993
A new" mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors
G Zhang, JD Cressler, G Niu, AJ Joseph
IEEE Transactions on Electron Devices 49 (12), 2151-2156, 2002
Radiation effects in SiGe technology
JD Cressler
IEEE transactions on Nuclear Science 60 (3), 1992-2014, 2013
Multiple-bit upset in 130 nm CMOS technology
AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006
Design and fabrication of planar guard ring termination for high-voltage SiC diodes
DC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC Tin
Solid-State Electronics 44 (8), 1367-1372, 2000
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
G Niu, JD Cressler, S Zhang, WE Ansley, CS Webster, DL Harame
IEEE Transactions on Electron Devices 48 (11), 2568-2574, 2001
Optimization of SiGe HBT technology for high speed analog and mixed-signal applications
DL Harame, JMC Stork, BS Meyerson, KYJ Hsu, J Cotte, KA Jenkins, ...
Proceedings of IEEE International Electron Devices Meeting, 71-74, 1993
RF linearity characteristics of SiGe HBTs
G Niu, Q Liang, JD Cressler, CS Webster, DL Harame
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1558-1565, 2001
A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
G Niu, JD Cressler, SJ Mathew, S Subbanna
IEEE Transactions on Electron Devices 46 (9), 1912-1914, 1999
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