Shin Mou
Title
Cited by
Cited by
Year
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
1812018
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 062101, 2018
1232018
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
1212017
Single defect light-emitting diode in a van der Waals heterostructure
G Clark, JR Schaibley, J Ross, T Taniguchi, K Watanabe, JR Hendrickson, ...
Nano letters 16 (6), 3944-3948, 2016
1012016
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao
Applied Physics Letters 109 (13), 132103, 2016
942016
Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect
PF Qiao, S Mou, SL Chuang
Optics express 20 (3), 2319-2334, 2012
602012
Incomplete ionization of a 110 meV unintentional donor in β-Ga 2 O 3 and its effect on power devices
AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen
Scientific reports 7 (1), 1-7, 2017
572017
Midinfrared type-II superlattice photodiodes toward room temperature operation
JV Li, CJ Hill, J Mumolo, S Gunapala, S Mou, SL Chuang
Applied Physics Letters 93 (16), 163505, 2008
532008
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao
physica status solidi (a) 215 (2), 1700467, 2018
452018
Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2
B Akdim, R Pachter, S Mou
Nanotechnology 27 (18), 185701, 2016
452016
Metalorganic chemical vapor deposition growth of high-quality type II superlattices on (001) GaAs substrates
XB Zhang, JH Ryou, RD Dupuis, A Petschke, S Mou, SL Chuang, C Xu, ...
Applied physics letters 88 (7), 072104, 2006
442006
P-type conduction in two-dimensional MoS2 via oxygen incorporation
AT Neal, R Pachter, S Mou
Applied Physics Letters 110 (19), 193103, 2017
412017
Superhydrophobicity of hierarchical ZnO nanowire coatings
M Gong, Z Yang, X Xu, D Jasion, S Mou, H Zhang, Y Long, S Ren
Journal of Materials Chemistry A 2 (17), 6180-6184, 2014
412014
Improved surface and structural properties of superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces
XB Zhang, JH Ryou, RD Dupuis, C Xu, S Mou, A Petschke, KC Hsieh, ...
Applied Physics Letters 90 (13), 131110, 2007
292007
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
272019
Temperature and doping concentration dependence of the energy band gap in β-Ga2O3 thin films grown on sapphire
S Rafique, L Han, S Mou, H Zhao
Optical Materials Express 7 (10), 3561-3570, 2017
272017
Quantum efficiency analysis of InAs–GaSb type-II superlattice photodiodes
S Mou, JV Li, SL Chuang
IEEE journal of quantum electronics 45 (6), 737-743, 2009
252009
Surface channel current in type-II superlattice photodiodes
S Mou, JV Li, SL Chuang
Journal of Applied Physics 102 (6), 066103, 2007
252007
Midinfrared type-II superlattice interband tunneling photodetectors
S Mou, A Petschke, Q Lou, SL Chuang, JV Li, CJ Hill
Applied Physics Letters 92 (15), 153505, 2008
182008
Toward realization of Ga2O3for power electronics applications
G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
132017
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Articles 1–20