Chandan Joishi
Chandan Joishi
IIT Bombay (Ph.D.), The Ohio State University
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Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 233503, 2018
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107
AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ...
IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 123501, 2018
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 153501, 2019
Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations
S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha
Applied Physics Express 9 (7), 071302, 2016
Enhanced n-type β-Ga2O3 gate stack performance using Al2O3/SiO2 bi-layer dielectric
D Biswas, C Joishi, J Biswas, K Thakar, S Rajan, S Lodha
Applied Physics Letters 114 (21), 212106, 2019
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation
C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan
IEEE Transactions on Electron Devices 67 (11), 4813-4819, 2020
Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks
S Kothari, C Joishi, H Nejad, N Variam, S Lodha
Applied Physics Letters 109 (7), 072105, 2016
Electrothermal Characteristics of Delta-Doped -Ga2O3 Metal–Semiconductor Field-Effect Transistors
N Kumar, C Joishi, Z Xia, S Rajan, S Kumar
IEEE Transactions on Electron Devices 66 (12), 5360-5366, 2019
Electro-Thermal Simulation of Delta-Doped -Ga2O3 Field Effect Transistors
N Kumar, C Joishi, Z Xia, S Rajan, S Kumar
2019 18th IEEE Intersociety Conference on Thermal and Thermomechanicalá…, 2019
Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET)
Y Zhang, Z Xia, C Joishi, S Rajan
2018 76th Device Research Conference (DRC), 1-2, 2018
Temperature and field dependent low frequency noise characterization of Ge n-FETs
SL Sayantan Ghosh, Piyush Bhatt, Yogesh Tiwari, Chandan Joishi
Journal of Applied Physics 120 (9), 095703, 2016
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