Chandan Joishi
Chandan Joishi
IIT Bombay (Ph.D.), The Ohio State University
Verified email at osu.edu
Title
Cited by
Cited by
Year
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
1452018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
1342017
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied Physics Letters 112 (23), 233503, 2018
692018
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
592018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
582018
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
572018
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
322019
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
292019
MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107
AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ...
IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018
262018
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
222019
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 123501, 2018
222018
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 153501, 2019
112019
Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations
S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha
Applied Physics Express 9 (7), 071302, 2016
92016
Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks
S Kothari, C Joishi, H Nejad, N Variam, S Lodha
Applied Physics Letters 109 (7), 072105, 2016
72016
Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3and GeOxILs Using Ultrafast Charge Trap–Detrap Techniques
C Joishi, S Ghosh, S Kothari, N Parihar, S Mukhopadhyay, S Mahapatra, ...
IEEE Transactions on Electron Devices 65 (10), 4245-4253, 2018
42018
Temperature and field dependent low frequency noise characterization of Ge n-FETs
SL Sayantan Ghosh, Piyush Bhatt, Yogesh Tiwari, Chandan Joishi
Journal of Applied Physics 120 (9), 095703, 2016
42016
Deep-recessed -GaO delta-doped field effect transistors with in situ epitaxial passivation
C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan
arXiv preprint arXiv:2004.10440, 2020
32020
Electro-Thermal Simulation of Delta-Doped -Ga2O3 Field Effect Transistors
N Kumar, C Joishi, Z Xia, S Rajan, S Kumar
2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2019
32019
Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET)
Y Zhang, Z Xia, C Joishi, S Rajan
2018 76th Device Research Conference (DRC), 1-2, 2018
32018
Electrothermal Characteristics of Delta-Doped -Ga2O3 Metal–Semiconductor Field-Effect Transistors
N Kumar, C Joishi, Z Xia, S Rajan, S Kumar
IEEE Transactions on Electron Devices 66 (12), 5360-5366, 2019
22019
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