A new structure of electrically doped TFET for improving electronic characteristics S Yadav, R Madhukar, D Sharma, M Aslam, D Soni, N Sharma
Applied Physics A 124, 1-9, 2018
29 2018 A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour S Yadav, D Sharma, BV Chandan, M Aslam, D Soni, N Sharma
Superlattices and Microstructures 117, 9-17, 2018
28 2018 Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high S Yadav, D Sharma, D Soni, M Aslam
Journal of Computational Electronics 16, 721-731, 2017
24 2017 Performance improvement of doped TFET by using plasma formation concept D Soni, D Sharma, S Yadav, M Aslam, N Sharma
Superlattices and Microstructures 113, 97-109, 2018
22 2018 A comparative investigation of low work‐function metal implantation in the oxide region for improving electrostatic characteristics of charge plasma TFET M Aslam, D Sharma, S Yadav, D Soni, N Sharma, A Gedam
Micro & Nano Letters 14 (2), 123-128, 2019
13 2019 Effective approach to enhance DC and high‐frequency performance of electrically doped TFET S Yadav, A Lemtur, D Sharma, M Aslam, D Soni
Micro & Nano Letters 13 (10), 1469-1474, 2018
13 2018 A new design approach for enhancement of DC/RF performance with improved ambipolar conduction of dopingless TFET M Aslam, S Yadav, D Soni, D Sharma
Superlattices and Microstructures 112, 86-96, 2017
13 2017 Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept D Soni, D Sharma, M Aslam, S Yadav
Micro & Nano Letters 13 (12), 1728-1733, 2018
12 2018 Hetero‐material CPTFET with high‐frequency and linearity analysis for ultra‐low power applications DS Yadav, D Sharma, S Tirkey, DG Sharma, S Bajpai, D Soni, S Yadav, ...
Micro & Nano Letters 13 (11), 1609-1614, 2018
10 2018 Gate metal work function engineering for the improvement of electrostatic behaviour of doped tunnel field effect transistor D Soni, D Sharma, S Yadav, M Aslam, DS Yadav, N Sharma
2017 IEEE International Symposium on Nanoelectronic and Information Systems …, 2017
9 2017 Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation M Aslam, D Sharma, D Soni, S Yadav, BR Raad, DS Yadav, N Sharma
Micro & Nano Letters 13 (10), 1480-1485, 2018
8 2018 Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device … S Gupta, D Sharma, D Soni, S Yadav, M Aslam, DS Yadav, K Nigam, ...
Micro & Nano Letters 13 (8), 1192-1196, 2018
8 2018 Enhancement of the DC performance of a PNPN hetero-dielectric BOX tunnel field-effect transistor for low-power applications M Aslam, G Korram, D Sharma, S Yadav, N Sharma
Journal of Computational Electronics 19 (1), 271-276, 2020
7 2020 A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric D Soni, D Sharma, M Aslam, S Yadav
Applied Physics A 124, 1-10, 2018
7 2018 A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization M Aslam, D Sharma, S Yadav, D Soni, V Bajaj
Applied Physics A 124 (4), 342, 2018
4 2018 A novel analysis to reduce leakage current in charge plasma based TFET S Yadav, D Sharma, M Aslam, D Soni
2017 14th IEEE India Council International Conference (INDICON), 1-3, 2017
4 2017 A Dielectric Modulated Polarity Controlled Electrically Doped Junctionless TFET Biosensor for IOT Applications D Soni, AK Behera, D Sharma, M Aslam, S Yadav
Smart Systems and IoT: Innovations in Computing: Proceeding of SSIC 2019 …, 2019
1 2019 Design Analysis of Ohmic Junction Based Tunnel FET S Yadav, M Aslam, V Garg, PJR Reddy
Silicon 14 (16), 10901-10908, 2022
2022 Linearity/intermodulation distortion analysis of tunneling and thermionic emission mechanisms; design proposal and high frequency investigation S Yadav, A Khare, GP Mishra, M Aslam
Semiconductor Science and Technology 35 (10), 105021, 2020
2020 Effect of Metallic Strip Deposition Within the Source Dielectric with Applied Double Metallic Drain for Enhanced DC/RF Behavior of Charge Plasma TFET for Low-Power IOT Applications M Aslam, D Sharma, D Soni, S Yadav
Smart Systems and IoT: Innovations in Computing: Proceeding of SSIC 2019 …, 2020
2020 
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