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| Buffer optimization for crack-free GaN epitaxial layers grown on Si (1 1 1) substrate by MOCVD E Arslan, MK Ozturk, A Teke, S Ozcelik, E Ozbay Journal of Physics D: Applied Physics 41 (15), 155317, 2008 | 162 | 2008 |
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| Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ... Journal of Applied Physics 105 (1), 2009 | 119 | 2009 |
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| Group III nitrides RA Ferreyra, C Zhu, A Teke, H Morkoç Springer Handbook of Electronic and Photonic Materials, 1-1, 2017 | 46 | 2017 |
| Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel S Gökden, R Tülek, A Teke, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... Semiconductor science and technology 25 (4), 045024, 2010 | 42 | 2010 |
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| GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors A Teke, S Dogan, F Yun, MA Reshchikov, H Le, XQ Liu, H Morkoc, ... Solid-State Electronics 47 (8), 1401-1408, 2003 | 35 | 2003 |
| Tunable wavelength hot electron light emitter N Balkan, A Teke, R Gupta, A Straw, JH Wolter, W Van Der Vleuten Applied physics letters 67 (7), 935-937, 1995 | 25 | 1995 |
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