Terje Finstad
Terje Finstad
Department of Physics, University of Oslo
fys.uio.no üzerinde doğrulanmış e-posta adresine sahip
Alıntı yapanlar
Alıntı yapanlar
Phase stability, electronic structure, and optical properties of indium oxide polytypes
SZ Karazhanov, P Ravindran, P Vajeeston, A Ulyashin, TG Finstad, ...
Physical Review B 76 (7), 075129, 2007
Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
K Cho, M Numan, TG Finstad, WK Chu, J Liu, JJ Wortman
Applied physics letters 47 (12), 1321-1323, 1985
Lattice-matched Sc1-xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors
CJ Palmstrøm, S Mounier, TG Finstad, PF Miceli
Applied physics letters 56 (4), 382-384, 1990
A Xe marker study of the transformation of Ni2Si to NiSi in thin films
TG Finstad
Physica status solidi (a) 63 (1), 223-228, 1981
Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation
DK Sadana, W Maszara, JJ Wortmann, GA Rozgonyi, WK Chu
Journal of the Electrochemical Society 131 (4), 943, 1984
Reaction of silicon with films of Co Ni alloys: Phase separation of the monosilicides and nucleation of the disilicides
FM d'Heurle, DD Anfiteatro, VR Deline, TG Finstad
Thin Solid Films 128 (1-2), 107-124, 1985
Channeling effect for low energy ion implantation in Si
K Cho, WR Allen, TG Finstad, WK Chu, J Liu, JJ Wortman
Nuclear Instruments and Methods in Physics Research B 7, 265-272, 1985
Doping of p‐type ZnSb: Single parabolic band model and impurity band conduction
PHM Böttger, GS Pomrehn, GJ Snyder, TG Finstad
physica status solidi (a) 208 (12), 2753-2759, 2011
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy
U Serincan, G Kartopu, A Guennes, TG Finstad, R Turan, Y Ekinci, ...
Semiconductor science and technology 19 (2), 247, 2003
Etch rates of (100),(111) and (110) single-crystal silicon in TMAH measured in situ by laser reflectance interferometry
E Steinsland, T Finstad, A Hanneborg
Sensors and Actuators A: Physical 86 (1-2), 73-80, 2000
Design and construction of a four-point bending based set-up for measurement of piezoresistance in semiconductors
E Lund, TG Finstad
Review of scientific instruments 75 (11), 4960-4966, 2004
Structural study of GaSb/AlSb strained-layer superlattice
CK Pan, DC Zheng, TG Finstad, WK Chu, VS Speriosu, MA Nicolet, ...
Physical Review B 31 (3), 1270, 1985
Low temperature interdiffusion in Au/In thin film couples
J Bjøntegaard, L Buene, T Finstad, O Lønsjø, T Olsen
Thin Solid Films 101 (3), 253-262, 1983
Silicide formation with nickel and platinum double layers on silicon
TG Finstad
Thin Solid Films 51 (3), 411-424, 1978
Thermoelectric properties of Cu doped ZnSb containing Zn3P2 particles
K Valset, PHM Böttger, J Taftø, TG Finstad
Journal of Applied Physics 111 (2), 023703, 2012
Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing
T Brat, CM Osburn, T Finstad, J Liu, B Ellington
Journal of the Electrochemical Society 133 (7), 1451, 1986
The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solution
TG Finstad, DD Anfiteatro, VR Deline, FM d'Heurle, P Gas, VL Moruzzi, ...
Thin Solid Films 135 (2), 229-243, 1986
AlAl thermocompression bonding for wafer-level MEMS sealing
N Malik, K Schjølberg-Henriksen, E Poppe, MMV Taklo, TG Finstad
Sensors and Actuators A: Physical 211, 115-120, 2014
Silicide formation with bilayers of Pd‐Pt, Pd‐Ni, and Pt‐Ni
TG Finstad, MA Nicolet
Journal of Applied Physics 50 (1), 303-307, 1979
The 1.54‐μ m photoluminescence from an (Er, Ge) co-doped Si O 2 film deposited on Si by rf magnetron sputtering
CL Heng, TG Finstad, P Storås, YJ Li, AE Gunnæs, O Nilsen
Applied physics letters 85 (19), 4475-4477, 2004
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Makaleler 1–20