| Optically-pumped dilute nitride spin-VCSEL K Schires, R Al Seyab, A Hurtado, VM Korpijärvi, M Guina, ID Henning, ... Optics Express 20 (4), 3550-3555, 2012 | 64 | 2012 |
| Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells A Aho, V Polojärvi, VM Korpijärvi, J Salmi, A Tukiainen, P Laukkanen, ... Solar Energy Materials and Solar Cells 124, 150-158, 2014 | 59 | 2014 |
| 2.7 W tunable orange-red GaInNAs semiconductor disk laser J Rautiainen, A Härkönen, VM Korpijärvi, P Tuomisto, M Guina, ... Optics Express 15 (26), 18345-18350, 2007 | 53 | 2007 |
| 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm VM Korpijärvi, T Leinonen, J Puustinen, A Härkönen, MD Guina Optics express 18 (25), 25633-25641, 2010 | 51 | 2010 |
| MBE grown GaInNAs-based multi-Watt disk lasers VM Korpijärvi, M Guina, J Puustinen, P Tuomisto, J Rautiainen, ... Journal of Crystal Growth 311 (7), 1868-1871, 2009 | 50 | 2009 |
| Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm VM Korpijärvi, EL Kantola, T Leinonen, R Isoaho, M Guina IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 480-484, 2015 | 39 | 2015 |
| Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser SS Alharthi, A Hurtado, VM Korpijarvi, M Guina, ID Henning, MJ Adams Applied Physics Letters 106 (2), 2015 | 35 | 2015 |
| Semiconductor disk lasers: Recent advances in generation of yellow-orange and mid-IR radiation M Guina, A Härkönen, VM Korpijärvi, T Leinonen, S Suomalainen Advances in Optical Technologies 2012, 2012 | 30 | 2012 |
| Postgrowth annealing of GaInAs∕ GaAs and GaInAsN∕ GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality J Pakarinen, CS Peng, J Puustinen, P Laukkanen, VM Korpijärvi, ... Applied Physics Letters 92 (23), 2008 | 28 | 2008 |
| Passively mode-locked GaInNAs disk laser operating at 1220 nm J Rautiainen, VM Korpijärvi, J Puustinen, M Guina, OG Okhotnikov Optics express 16 (20), 15964-15969, 2008 | 26 | 2008 |
| 615 nm GaInNAs VECSEL with output power above 10 W E Kantola, T Leinonen, JP Penttinen, VM Korpijärvi, M Guina Optics express 23 (16), 20280-20287, 2015 | 25 | 2015 |
| Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection SS Alharthi, A Hurtado, RK Al Seyab, VM Korpijarvi, M Guina, ID Henning, ... Applied Physics Letters 105 (18), 2014 | 25 | 2014 |
| Determination of composition and energy gaps of GaInNAsSb layers grown by MBE A Aho, VM Korpijärvi, R Isoaho, P Malinen, A Tukiainen, M Honkanen, ... Journal of Crystal Growth 438, 49-54, 2016 | 23 | 2016 |
| Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy VM Korpijärvi, A Aho, P Laukkanen, A Tukiainen, A Laakso, M Tuominen, ... Journal of Applied Physics 112 (2), 2012 | 21 | 2012 |
| 7.4 W yellow GaInNAs-based semiconductor disk laser T Leinonen, VM Korpijärvi, A Härkönen, M Guina Electronics letters 47 (20), 1139-1140, 2011 | 21 | 2011 |
| Spectral characteristics of narrow-linewidth high-power 1180 nm DBR laser with surface gratings H Virtanen, AT Aho, J Viheriälä, VM Korpijärvi, T Uusitalo, M Koskinen, ... IEEE Photonics Technology Letters 29 (1), 114-117, 2016 | 20 | 2016 |
| Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga-and In-rich environments of nitrogen atoms R Kudrawiec, M Syperek, M Latkowska, J Misiewicz, VM Korpijärvi, ... Journal of Applied Physics 111 (6), 2012 | 18 | 2012 |
| High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm VM Korpijärvi, J Viheriälä, M Koskinen, AT Aho, M Guina Optics letters 41 (4), 657-660, 2016 | 17 | 2016 |
| High-gain 1.3 μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10 Gb/s D Fitsios, G Giannoulis, VM Korpijärvi, J Viheriälä, A Laakso, N Iliadis, ... Applied Optics 54 (1), 46-52, 2015 | 16 | 2015 |
| Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures HM Khalil, S Mazzucato, S Ardali, O Celik, S Mutlu, B Royall, E Tiras, ... Materials Science and Engineering: B 177 (10), 729-733, 2012 | 15 | 2012 |
