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Engin ARSLAN
Engin ARSLAN
Antalya Bilim University, Bilkent University, Nanotechnology Research Center
Verified email at bilkent.edu.tr
Title
Cited by
Cited by
Year
Leakage current by Frenkel–Poole emission in Ni/Au schottky contacts on Al0. 83In0. 17N/AlN/GaN heterostructures
E Arslan, S Bütün, E Ozbay
Applied Physics Letters 94 (14), 2009
1622009
Buffer optimization for crack-free GaN epitaxial layers grown on Si (1 1 1) substrate by MOCVD
E Arslan, MK Ozturk, A Teke, S Ozcelik, E Ozbay
Journal of Physics D: Applied Physics 41 (15), 155317, 2008
1592008
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ...
Journal of Applied Physics 105 (1), 2009
1172009
Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures
E Arslan, Ş Altındal, S Özçelik, E Ozbay
Journal of Applied Physics 105 (2), 2009
1152009
Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures
E Arslan, Ş Altındal, S Özçelik, E Ozbay
Semiconductor science and technology 24 (7), 075003, 2009
962009
The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates
E Arslan, S Bütün, SB Lisesivdin, M Kasap, S Ozcelik, E Ozbay
Journal of Applied Physics 103 (10), 2008
872008
Effective mass of electron in monolayer graphene: Electron-phonon interaction
E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ...
Journal of Applied Physics 113 (4), 2013
842013
Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures
E Arslan, Y Şafak, Ş Altındal, Ö Kelekçi, E Özbay
Journal of non-crystalline solids 356 (20-22), 1006-1011, 2010
822010
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
E Arslan, S Bütün, Y Şafak, H Uslu, İ Taşçıoğlu, Ş Altındal, E Özbay
Microelectronics Reliability 51 (2), 370-375, 2011
522011
The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate
E Arslan, MK Ozturk, Ö Duygulu, AA Kaya, S Ozcelik, E Ozbay
Applied Physics A 94, 73-82, 2009
442009
Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis
E Arslan, S Bütün, Y Şafak, E Ozbay
Journal of electronic materials 39 (12), 2681-2686, 2010
372010
Strain analysis of the GaN epitaxial layers grown on nitridated Si (111) substrate by metal organic chemical vapor deposition
MK Ozturk, E Arslan, İ Kars, S Ozcelik, E Ozbay
Materials science in semiconductor processing 16 (1), 83-88, 2013
352013
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
E Arslan, Y Şafak, İ Taşçıoğlu, H Uslu, E Özbay
Microelectronic engineering 87 (10), 1997-2001, 2010
352010
Thyroid function in hyperemesis gravidarum and correlation with serum leptin levels
EÖ Arslan, L Cengiz, M Arslan
International Journal of Gynecology & Obstetrics 83 (2), 187-188, 2003
272003
Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction
E Arslan, Y Badali, M Aalizadeh, Ş Altındal, E Özbay
Journal of Physics and Chemistry of Solids 148, 109758, 2021
252021
Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate
E Arslan, MK Ozturk, H Cakmak, P Demirel, S Özçelik, E Ozbay
Journal of Materials Science: Materials in Electronics 24, 4471-4481, 2013
202013
The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si (1 1 1) substrates by MOCVD
E Arslan, MK Ozturk, S Ozcelik, E Ozbay
Current Applied Physics 9 (2), 472-477, 2009
192009
Indium rich InGaN solar cells grown by MOCVD
H Çakmak, E Arslan, M Rudziński, P Demirel, HE Unalan, W Strupiński, ...
Journal of Materials Science: Materials in Electronics 25, 3652-3658, 2014
182014
The electrical, optical, and structural properties of GaN epitaxial layers grown on Si (111) substrate with SiNx interlayers
E Arslan, Ö Duygulu, AA Kaya, A Teke, S Özçelik, E Ozbay
Superlattices and Microstructures 46 (6), 846-857, 2009
172009
Current transport mechanisms and trap state investigations in (Ni/Au)–AlN/GaN Schottky barrier diodes
E Arslan, S Bütün, Y Şafak, H Çakmak, H Yu, E Özbay
Microelectronics Reliability 51 (3), 576-580, 2011
162011
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