| Effective mass of electron in monolayer graphene: Electron-phonon interaction E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ... Journal of Applied Physics 113 (4), 2013 | 88 | 2013 |
| Well-width dependence of the in-plane effective mass and quantum lifetime of electrons in multiple quantum wells H Çelik, M Cankurtaran, A Bayrakli, E Tiras, N Balkan Semiconductor science and technology 12 (4), 389, 1997 | 61 | 1997 |
| Hot electron energy relaxation via acoustic phonon emission in modulation-doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterojunctions with double-subband occupancy E Tiras, M Cankurtaran, H Celik, N Balkan Physical Review B 64 (8), 085301, 2001 | 27 | 2001 |
| Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN O Celik, E Tiras, S Ardali, S Lisesivdin, E Ozbay Open Physics 10 (2), 485-491, 2012 | 26 | 2012 |
| Quantum and Transport Mobilities of Electrons in GaAs/Ga1−xAlxAs Multiple Quantum Wells M Cankurtaran, H Celik, E Tiras, A Bayrakli, N Balkan physica status solidi (b) 207 (1), 139-146, 1998 | 21 | 1998 |
| In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy E Tiras, M Gunes, N Balkan, WJ Schaff physica status solidi (b) 247 (1), 189-193, 2010 | 20 | 2010 |
| Magnetotransport in modulation-doped In0. 53Ga0. 47As/In0. 52Al0. 48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons E Tiras, M Cankurtaran, H Celik, AB Thoms, N Balkan Superlattices and microstructures 29 (2), 147-167, 2001 | 20 | 2001 |
| Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, F Nutku, Ç Cetinkaya, ... Semiconductor Science and Technology 35 (2), 025009, 2020 | 19 | 2020 |
| Superconductivity in heavily compensated Mg-doped InN E Tiras, M Gunes, N Balkan, R Airey, WJ Schaff Applied Physics Letters 94 (14), 2009 | 18 | 2009 |
| Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs O Celik, E Tiras, S Ardali, SB Lisesivdin, E Ozbay physica status solidi c 8 (5), 1625-1628, 2011 | 17 | 2011 |
| The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation S Ardali, G Atmaca, SB Lisesivdin, T Malin, V Mansurov, K Zhuravlev, ... physica status solidi (b) 252 (9), 1960-1965, 2015 | 16 | 2015 |
| Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures HM Khalil, S Mazzucato, S Ardali, O Celik, S Mutlu, B Royall, E Tiras, ... Materials Science and Engineering: B 177 (10), 729-733, 2012 | 16 | 2012 |
| Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells E Tiras, N Balkan, S Ardali, M Gunes, C Fontaine, A Arnoult Philosophical Magazine 91 (4), 628-639, 2011 | 14 | 2011 |
| Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures E Tiras, O Celik, S Mutlu, S Ardali, SB Lisesivdin, E Ozbay Superlattices and Microstructures 51 (6), 733-744, 2012 | 13 | 2012 |
| In-plane photovoltage measurements on MBE grown InN E Tiras, D Zanato, S Mazzucato, N Balkan, WJ Schaff Superlattices and Microstructures 36 (4-6), 473-485, 2004 | 11 | 2004 |
| Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate F SONMEZ, E ARSLAN, S ARDALI, E TIRAS, E OZBAY Journal of Alloys and Compounds 864, 158895, 2021 | 10 | 2021 |
| Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, A Erol, J Puustinen, ... Semiconductor Science and Technology 35 (9), 095038, 2020 | 10 | 2020 |
| SiC Substrate effects on electron transport in the epitaxial graphene layer E Arslan, S Cakmakyapan, Ö Kazar, S Bütün, SB Lişesivdin, NA Cinel, ... Electronic Materials Letters 10, 387-391, 2014 | 10 | 2014 |
| Energy relaxation rates in AlInN/AlN/GaN heterostructures E Tiras, S Ardali, E Arslan, E Ozbay Journal of electronic materials 41, 2350-2361, 2012 | 10 | 2012 |
| Momentum relaxation of electrons in InN D Zanato, E Tiras, N Balkan, A Boland‐Thoms, JY Wah, G Hill physica status solidi (c) 2 (8), 3077-3081, 2005 | 10 | 2005 |
