| Performance impacts of analog ReRAM non-ideality on neuromorphic computing YH Lin, CH Wang, MH Lee, DY Lee, YY Lin, FM Lee, HL Lung, KC Wang, ... IEEE Transactions on Electron Devices 66 (3), 1289-1295, 2019 | 62 | 2019 |
| Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019 | 53 | 2019 |
| Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation TL Tsai, YH Lin, TY Tseng IEEE Electron Device Letters 36 (7), 675-677, 2015 | 47 | 2015 |
| Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019 | 39 | 2019 |
| Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part I: Experimental characterization E Covi, W Wang, YH Lin, M Farronato, E Ambrosi, D Ielmini IEEE Transactions on Electron Devices 68 (9), 4335-4341, 2021 | 30 | 2021 |
| Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part II: Mechanism and modeling W Wang, E Covi, YH Lin, E Ambrosi, A Milozzi, C Sbandati, M Farronato, ... IEEE Transactions on Electron Devices 68 (9), 4342-4349, 2021 | 25 | 2021 |
| A volatile RRAM synapse for neuromorphic computing E Covi, YH Lin, W Wang, T Stecconi, V Milo, A Bricalli, E Ambrosi, ... 2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019 | 22 | 2019 |
| In-memory-searching architecture based on 3D-NAND technology with ultra-high parallelism PH Tseng, FM Lee, YH Lin, LY Chen, YC Li, HW Hu, YY Wang, CC Hsieh, ... 2020 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2020 | 14 | 2020 |
| Device instability of ReRAM and a novel reference cell design for wide temperature range operation YH Lin, YY Lin, FM Lee, YH Ho, KC Hsu, MH Lee, DY Lee, KH Chiang, ... IEEE Electron Device Letters 38 (9), 1224-1227, 2017 | 12 | 2017 |
| A novel varying-bias read scheme for MLC and wide temperature range TMO ReRAM YH Lin, MH Lee, JY Wu, YY Lin, FM Lee, DY Lee, KH Chiang, EK Lai, ... IEEE Electron Device Letters 37 (11), 1426-1429, 2016 | 12 | 2016 |
| ReRAM-based pseudo-true random number generator With high throughput and unpredictability characteristics PH Tseng, MH Lee, YH Lin, HL Lung, KC Wang, CY Lu IEEE Transactions on Electron Devices 68 (4), 1593-1597, 2021 | 11 | 2021 |
| Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion W Wang, E Covi, YH Lin, E Ambrosi, D Ielmini 2019 IEEE International Electron Devices Meeting (IEDM), 32.3. 1-32.3. 4, 2019 | 10 | 2019 |
| A comprehensive study of 3-stage high resistance state retention behavior for TMO ReRAMs from single cells to a large array YH Lin, YH Ho, MH Lee, CH Wang, YY Lin, FM Lee, KC Hsu, PH Tseng, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2017 | 8 | 2017 |
| Semiconductor memory device and method for temperature compensation using temperature-resistance-voltage functions MH Lee, YH Lin US Patent 9,747,980, 2017 | 7 | 2017 |
| Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer YH Lin, DC Huang, JC Lou, TY Tseng Thin Solid Films 644, 10-15, 2017 | 5 | 2017 |
| Multi-state memory device and method for adjusting memory state characteristics of the same YH Lin, YY Lin, FM Lee, CH Wang, PH Tseng, KC Hsu US Patent 10,482,953, 2019 | 4 | 2019 |
| Studies on ReRAM conduction mechanism and the varying-bias read scheme for MLC and wide temperature range TMO ReRAM MH Lee, YH Lin, YY Lin, FM Lee, DY Lee, KY Hsieh 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 4 | 2018 |
| NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing YH Lin, PH Tseng, FM Lee, MH Lee, CC Hsieh, DY Lee, KC Wang, CY Lu 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 3 | 2022 |
| An Analog In-Memory-Search Solution based on 3D-NAND Flash Memory for Brain-Inspired Computing PH Tseng, YH Lin, TC Bo, FM Lee, YY Lin, MH Lee, KY Hsieh, KC Wang, ... 2022 International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2022 | 2 | 2022 |
| A Hybrid In-Memory-Searching and In-Memory-Computing Architecture for NVM Based AI Accelerator PH Tseng, FM Lee, YH Lin, YY Wang, MH Lee, KY Hsieh, KC Wang, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 2 | 2021 |
Chih-Yuan LuMacronixVerified email at mxic.com.tw
