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Volodymyr Sheremet
Volodymyr Sheremet
Verified email at bilkent.edu.tr
Title
Cited by
Cited by
Year
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 083701, 2012
472012
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, Y Kudrik, ...
Semiconductors 42 (6), 689-693, 2008
312008
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
AE Belyaev, NS Boltovets, RV Konakova, Y Kudryk, AV Sachenko, ...
arXiv preprint arXiv:1104.1030, 2011
222011
Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density
AV Sachenko, AE Belyaev, AV Bobyl, NS Boltovets, VN Ivanov, ...
Semiconductors 46 (3), 334-341, 2012
142012
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ...
Superlattices and Microstructures 111, 1177-1194, 2017
132017
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, VP Kladko, ...
Journal of applied physics 112 (6), 063703, 2012
132012
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
AA M. Genç, V. Sheremet, M. Elçi, A.E. Kasapoğlu, İ. Altuntaş, İ. Demir, G ...
Superlattices and Microstructures 128, 9-13, 2019
122019
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 113, 623-634, 2018
102018
Temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si ohmic contacts subjected to microwave irradiation
AE Belyaev, NS Boltovets, RV Konakova, Y Kudryk, AV Sachenko, ...
Semiconductors 46 (3), 330-333, 2012
102012
Metrological aspects of measuring resistance of ohmic contacts
VN Sheremet
Radioelectronics and communications systems 53 (3), 119-128, 2010
102010
On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductor Physics, Quantum Electronics & Optoelectronics 10 (3), 1-5, 2007
92007
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 116, 253-261, 2018
82018
Temperature dependences of the contact resistivity in ohmic contacts to n+-InN
AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ...
Semiconductors 49 (4), 461-471, 2015
82015
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
72013
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
62013
The mechanism of contact-resistance formation on lapped n-Si surfaces
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, ...
Semiconductors 47 (3), 449-454, 2013
62013
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2008
52008
Development of high-stable contact systems to gallium nitride microwave diodes
AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2007
52007
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ...
Technical Physics Letters 42 (6), 649-651, 2016
42016
Effect of microwave irradiation on the resistance of Au-TiB x-Ge-Au-nn+-n++-GaAs (InP) ohmic contacts
AE Belyaev, AV Sachenko, NS Boltovets, VN Ivanov, RV Konakova, ...
Semiconductors 46 (4), 541-544, 2012
42012
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