Nidhi
Title
Cited by
Cited by
Year
A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications
CH Jan, U Bhattacharya, R Brain, SJ Choi, G Curello, G Gupta, W Hafez, ...
2012 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2012
3282012
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
1572013
Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth
S Dasgupta, Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra
Applied physics letters 96 (14), 143504, 2010
1372010
A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized forá…
CH Jan, F Al-Amoody, HY Chang, T Chang, YW Chen, N Dias, W Hafez, ...
2015 Symposium on VLSI Technology (VLSI Technology), T12-T13, 2015
862015
Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures
T Palacios, A Chakraborty, S Keller, UK Mishra
IEEE electron device letters 27 (11), 877-880, 2006
632006
Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth
U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ...
Electron Device Letters, IEEE 32 (2), 137-139, 2011
592011
N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LGproduct of 16.8 GHz-Ám
S Dasgupta, DF Brown, S Keller, JS Speck, UK Mishra
2009 IEEE international electron devices meeting (IEDM), 1-3, 2009
362009
Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
S Dasgupta, SC Nidhi, F Wu, JS Speck, UK Mishra
Applied physics express 4 (4), 045502, 2011
312011
Experimental demonstration of III-nitride hot-electron transistor with GaN base
S Dasgupta, A Raman, JS Speck, UK Mishra
IEEE electron device letters 32 (9), 1212-1214, 2011
302011
Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm
S Dasgupta, J Lu, JS Speck, UK Mishra
IEEE Electron Device Letters 33 (6), 794-796, 2012
292012
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs Withof 275 GHz
S Dasgupta, J Lu, JS Speck, UK Mishra
IEEE electron device letters 33 (7), 961-963, 2012
282012
N-Polar InAlN/AlN/GaN MIS-HEMTs
DF Brown, F Wu, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 31 (8), 800-802, 2010
242010
and of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT
S Dasgupta, Y Pei, BL Swenson, DF Brown, S Keller, JS Speck, ...
IEEE electron device letters 30 (6), 599-601, 2009
232009
fT and fMAX of 47 and 81 GHz, Respectively, on N-Polar GaN/A1N MIS-HEMT
S Dasgupta, Y Pei, BL Swenson, DF Brown, S Keller, UK MISHRA, ...
IEEE electron device letters 30 (6), 599-601, 2009
232009
Automatic device for heating and frothing a liquid, in particular milk
R Oldani, E Bottelli
US Patent 6,840,163, 2005
21*2005
Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms
C Prasad, KW Park, M Chahal, I Meric, SR Novak, S Ramey, P Bai, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-5-1-4B-5-8, 2016
202016
N-Polar GaN/AlN MIS-HEMT Withof 204 GHz for Ka-Band Applications
S Dasgupta, S Keller, JS Speck, UK Mishra
IEEE electron device letters 32 (12), 1683-1685, 2011
192011
N-Polar GaN/AlN MIS-HEMT Withof 204 GHz for Ka-Band Applications
S Dasgupta, S Keller, JS Speck, UK Mishra
IEEE electron device letters 32 (12), 1683-1685, 2011
192011
Study of interface barrier of interface for nitrogen-polar GaN based high electron mobility transistors
Nidhi, S Rajan, S Keller, F Wu, SP DenBaars, JS Speck, UK Mishra
Journal of Applied Physics 103 (12), 124508, 2008
192008
Study of interface barrier of interface for nitrogen-polar GaN based high electron mobility transistors
Nidhi, S Rajan, S Keller, F Wu, SP DenBaars, JS Speck, UK Mishra
Journal of Applied Physics 103 (12), 124508, 2008
192008
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