| RF SOI switch FET design and modeling tradeoffs for GSM applications S Parthasarathy, A Trivedi, S Sirohi, R Groves, M Olsen, YS Chauhan, ... 2010 23rd International Conference on VLSI Design, 194-199, 2010 | 87 | 2010 |
| Influence of drift region on the 1/f noise in LDMOS AA Dikshit, V Subramanian, SJ Pandharpure, S Sirohi, TJ Letavic 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 15 | 2012 |
| Optical through silicon via YT Ngu, V Jain, JJ Ellis-Monaghan, ST Ventrone, S Sirohi US Patent 10,197,730, 2019 | 9 | 2019 |
| BSIM6--Benchmarking the Next-Generation MOSFET Model for RF Applications A Dutta, S Sirohi, T Ethirajan, H Agarwal, YS Chauhan, RQ Williams 2014 27th International Conference on VLSI Design and 2014 13th …, 2014 | 7 | 2014 |
| Transitioning from BSIM4 to BSIM6 YS Chauhan, M Karim, V Sriram, P Thakur, N Paydovosi, A Sachid, ... Proc. MOS-AK Workshop, 1-29, 2012 | 6 | 2012 |
| Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz US Raghunathan, S Sirohi, V Ruparelia, PK Sharma, DP Ioannou, V Jain, ... 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 4 | 2022 |
| Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications S Sirohi, V Jain, A Raman, B Nukala, E Veeramani, JW Adkisson, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 3 | 2018 |
| Modeling of high frequency noise in SOI MOSFETs M Varadharajaperumal, S Sirohi, S Khandelwal, E Tamilmani, ... 2010 23rd International Conference on VLSI Design, 212-217, 2010 | 3 | 2010 |
| Experiments and modeling of high-frequency noise in deep submicron MOSFETs S Sirohi University of Louisiana at Lafayette, 2005 | 3 | 2005 |
| Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence C Yadav, A Dutta, S Sirohi, T Ethirajan, YS Chauhan 2016 29th International Conference on VLSI Design and 2016 15th …, 2016 | 1 | 2016 |
| Design Trade-offs between Series-Peaking Inductor and High SiGe HBTs in Transimpedance Amplifiers PK Sharma, V Ruparelia, S Sirohi, US Raghunathan, V Vanukuru, V Jain 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023 | | 2023 |
| Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT BW Lim, A Raman, S Sirohi 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023 | | 2023 |
| Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs S Sirohi, BW Lim, A Raman, FA Anderson 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | | 2022 |
| Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications S Sirohi, S Khandelwal 2010 10th IEEE International Conference on Solid-State and Integrated …, 2010 | | 2010 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurVerified email at iitk.ac.in
