Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ... Applied Physics Letters 99 (25), 2011 | 358 | 2011 |
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang Applied Physics Letters 101 (16), 2012 | 178 | 2012 |
High dynamic range image sensor with virtual high-low sensitivity pixels D Yang, G Chen, OO Cellek, X Wang, CW Lu, D Mao, DH Tai US Patent 9,955,090, 2018 | 59 | 2018 |
Detailed investigation of electron transport, capture and gain in Al0. 3Ga0. 7As/GaAs quantum well infrared photodetectors OO Cellek, C Besikci Semiconductor science and technology 19 (2), 183, 2003 | 47 | 2003 |
High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance OO Cellek, S Ozer, C Besikci IEEE journal of quantum electronics 41 (7), 980-985, 2005 | 42 | 2005 |
Gain and transient photoresponse of quantum well infrared photodetectors: a detailed ensemble Monte Carlo study OO Cellek, S Memis, U Bostanci, S Ozer, C Besikci Physica E: Low-dimensional Systems and Nanostructures 24 (3-4), 318-327, 2004 | 33 | 2004 |
Study of the valence band offsets between InAs and InAs1-xSbx alloys EH Steenbergen, OO Cellek, D Lubyshev, Y Qiu, JM Fastenau, AWK Liu, ... Quantum Sensing and Nanophotonic Devices IX 8268, 113-121, 2012 | 24 | 2012 |
Multiband photodetector utilizing serially connected unipolar and bipolar devices OO Cellek, YH Zhang US Patent 9,184,194, 2015 | 22 | 2015 |
Systems and methods for detecting light-emitting diode without flickering D Mao, T Willassen, J Solhusvik, K Mabuchi, G Chen, S Manabe, DH Tai, ... US Patent 10,044,960, 2018 | 21 | 2018 |
Virtual high dynamic range large-small pixel image sensor D Yang, G Chen, OO Cellek, Z Fu, CW Lu, D Mao, DH Tai US Patent 9,911,773, 2018 | 19 | 2018 |
A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ... Journal of crystal growth 378, 145-149, 2013 | 19 | 2013 |
Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy S Liu, H Li, OO Cellek, D Ding, XM Shen, ZY Lin, EH Steenbergen, J Fan, ... Applied Physics Letters 102 (7), 2013 | 19 | 2013 |
CMOS image sensor with dual floating diffusions per pixel for flicker-free detection of light emitting diodes D Mao, T Willassen, J Solhusvik, K Mabuchi, G Chen, S Manabe, DH Tai, ... US Patent 9,936,153, 2018 | 17 | 2018 |
Single-exposure high dynamic range sensor D Yang, OO Cellek, D Mao, X Cheng, X Wang, B Phan, D Tai US Patent 10,411,063, 2019 | 16 | 2019 |
Optically addressed near and long-wave infrared multiband photodetectors OO Cellek, JL Reno, YH Zhang Applied Physics Letters 100 (24), 2012 | 15 | 2012 |
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array S Ozer, OO Cellek, C Besikci Infrared physics & technology 47 (1-2), 115-118, 2005 | 14 | 2005 |
Temperature-dependent minority carrier lifetimes of InAs/InAs [sub] 1-x [/sub] Sb [sub] x [/sub] type-II superlattices EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ... Infrared Sensors, Devices, and Applications II 8512, 133-140, 2012 | 13 | 2012 |
Layers for increasing performance in image sensors CW Hsiung, OO Cellek, G Chen, D Mao, V Venezia, HC Tai US Patent 9,224,881, 2015 | 10 | 2015 |
Optically addressed multiband photodetector for infrared imaging applications OO Cellek, YH Zhang Quantum Sensing and Nanophotonic Devices IX 8268, 577-583, 2012 | 10 | 2012 |
Stacked image sensor D Mao, Z Lin, K Mabuchi, G Chen, DH Tai, B Phan, OO Cellek, D Yang US Patent 9,818,791, 2017 | 9 | 2017 |