Seshadri K Kolluri
Title
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Year
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
1532013
Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance
S Kolluri, K Endo, E Suzuki, K Banerjee
2007 IEEE International Electron Devices Meeting, 177-180, 2007
502007
Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability
C Xu, SK Kolluri, K Endo, K Banerjee
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013
492013
Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an Al2O3 Etch-Stop Technology
S Kolluri, S Keller, SP DenBaars, UK Mishra
Electron Device Letters, IEEE 33 (1), 44-46, 2012
43*2012
N-polar GaN MIS-HEMTs with a 12.1-W/mm continuous-wave output power density at 4 GHz on sapphire substrate
S Kolluri, S Keller, SP DenBaars, UK Mishra
IEEE electron device letters 32 (5), 635-637, 2011
402011
Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs
A Sasikumar, A Arehart, S Kolluri, MH Wong, S Keller, SP DenBaars, ...
IEEE electron device letters 33 (5), 658-660, 2012
372012
Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility …
S Kolluri, S Keller, D Brown, G Gupta, S Rajan, SP DenBaars, UK Mishra
Journal of Applied Physics 108 (7), 074502, 2010
332010
RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate
S Kolluri, Y Pei, S Keller, SP Denbaars, UK Mishra
Electron Device Letters, IEEE 30 (6), 584-586, 2009
282009
Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies
C Xu, L Jiang, SK Kolluri, BJ Rubin, A Deutsch, H Smith, K Banerjee
2009 IEEE/ACM International Conference on Computer-Aided Design-Digest of …, 2009
272009
Thermal modeling of on-chip interconnects and 3D packaging using EM tools
L Jiang, S Kolluri, BJ Rubin, H Smith, EG Colgan, MR Scheuermann, ...
2008 IEEE-EPEP Electrical Performance of Electronic Packaging, 279-282, 2008
192008
N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess
S Kolluri, S Keller, SP DenBaars, UK Mishra
69th Device Research Conference, 215-216, 2011
162011
RF performance of deep-recessed N-polar GaN MIS-HEMTs using a selective etch technology without ex situ surface passivation
S Kolluri, DF Brown, MH Wong, S Dasgupta, S Keller, SP DenBaars, ...
IEEE Electron Device Letters 32 (2), 134-136, 2010
152010
Impact ionization in N-polar AlGaN/GaN high electron mobility transistors
N Killat, MJ Uren, S Keller, S Kolluri, UK Mishra, M Kuball
Applied Physics Letters 105 (6), 063506, 2014
132014
GaN transistors with polysilicon layers for creating additional components
J Cao, R Beach, A Lidow, A Nakata, G Zhao, Y Ma, R Strittmatter, ...
US Patent 9,214,461, 2015
112015
Methodology for Thermal Modeling of On-Chip Interconnects Based on Electromagnetic Simulation Tools
H Smith, L Jiang, A Deutsch, K Chanda, BJ Rubin, J Gill, SK Kolluri
US Patent App. 12/037,753, 2009
102009
Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures
GA Umana-Membreno, TB Fehlberg, S Kolluri, DF Brown, S Keller, ...
Applied Physics Letters 98 (22), 222103, 2011
82011
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates
GA Umana-Membreno, TB Fehlberg, S Kolluri, DF Brown, G Parish, ...
Microelectronic engineering 88 (7), 1079-1082, 2011
62011
GaN transistors with polysilicon layers used for creating additional components
J Cao, R Beach, A Lidow, A Nakata, G Zhao, Y Ma, R Strittmatter, ...
US Patent 9,837,438, 2017
52017
Integrated circuit with matching threshold voltages and method for making same
J Cao, R Beach, A Lidow, A Nakata, R Strittmatter, G Zhao, Y Ma, ...
US Patent 9,214,399, 2015
32015
Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits
Z Chunhua, J Cao, A Lidow, R Beach, A Nakata, R Strittmatter, G Zhao, ...
US Patent 9,214,528, 2015
12015
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