Jinqiao Xie
Jinqiao Xie
Qorvo Inc
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
J Xie, X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 93 (12), 2008
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
Gallium nitride on high thermal conductivity material device and method
X Gu, J Xie, EA Beam III, DC Dumka, CC Lee
US Patent 9,337,278, 2016
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 2012
Photoresponse of n-ZnO∕ p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy
YI Alivov, Ü Özgür, S Doğan, D Johnstone, V Avrutin, N Onojima, C Liu, ...
Applied Physics Letters 86 (24), 2005
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo
Applied Physics Letters 106 (14), 2015
High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors
J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç
Applied Physics Letters 91 (13), 2007
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 2010
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 2013
Cavity polaritons in ZnO-based hybrid microcavities
R Shimada, J Xie, V Avrutin, U Ozgur, H Morkoç
Applied Physics Letters 92 (1), 011127-011127-3, 2008
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 2013
Inhibition of atherogenesis in LDLR knockout mice by systemic delivery of adeno-associated virus type 2-hIL-10
Y Liu, D Li, J Chen, J Xie, S Bandyopadhyay, D Zhang, ...
Atherosclerosis 188 (1), 19-27, 2006
High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination
J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay
Applied Physics Letters 113 (2), 2018
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 2014
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
New Journal of Physics 11 (6), 063031, 2009
Comparative study of etching high crystalline quality AlN and GaN
W Guo, J Xie, C Akouala, S Mita, A Rice, J Tweedie, I Bryan, R Collazo, ...
Journal of Crystal Growth 366, 20-25, 2013
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