Edwin W. Lee II
Edwin W. Lee II
Verified email at osu.edu
Title
Cited by
Cited by
Year
p-type doping of MoS2 thin films using Nb
MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ...
Applied Physics Letters 104 (9), 092104, 2014
2592014
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu
Applied Physics Letters 105 (7), 072105, 2014
532014
Layer-transferred MoS2/GaN PN diodes
EW Lee, CH Lee, PK Paul, L Ma, WD McCulloch, S Krishnamoorthy, Y Wu, ...
Applied Physics Letters 107 (10), 103505, 2015
512015
High current density 2D/3D MoS2/GaN Esaki tunnel diodes
S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ...
Applied Physics Letters 109 (18), 183505, 2016
402016
Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions
EW Lee, L Ma, DN Nath, CH Lee, A Arehart, Y Wu, S Rajan
Applied Physics Letters 105 (20), 203504, 2014
292014
Transferred large area single crystal MoS2 field effect transistors
CH Lee, W McCulloch, EW Lee, L Ma, S Krishnamoorthy, J Hwang, Y Wu, ...
Applied Physics Letters 107 (19), 193503, 2015
172015
A self-limiting layer-by-layer etching technique for 2H-MoS2
CH Lee, EW Lee II, W McCulloch, Z Jamal-Eddine, S Krishnamoorthy, ...
Applied Physics Express 10 (3), 035201, 2017
112017
Electron transport in large-area epitaxial MoS2
DN Nath, L Ma, CH Lee, E Lee, A Arehart, Y Wu, S Rajan
72nd Device Research Conference, 89-90, 2014
22014
Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors
EW Lee
The Ohio State University, 2016
2016
Demonstration of 2D/3D p-MoS2/n-SiC junction
EW Lee, L Ma, DN Nath, CH Lee, Y Wu, S Rajan
72nd Device Research Conference, 79-80, 2014
2014
p-type doping in CVD grown MoS2 using Nb
M Laskar, DN Nath, L Ma, E Lee, CH Lee, T Kent, Z Yang, R Mishra, ...
arXiv preprint arXiv:1310.6494, 2013
2013
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