Takip et
Christopher Parzyck
Christopher Parzyck
Postdoctoral researcher, Cornell University
cornell.edu üzerinde doğrulanmış e-posta adresine sahip
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Incoherent Cooper Pairing and Pseudogap Behavior in Single-Layer
BD Faeth, SL Yang, JK Kawasaki, JN Nelson, P Mishra, CT Parzyck, C Li, ...
Physical Review X 11 (2), 021054, 2021
512021
Single-crystal alkali antimonide photocathodes: High efficiency in the ultrathin limit
CT Parzyck, A Galdi, JK Nangoi, WJI DeBenedetti, J Balajka, BD Faeth, ...
Physical Review Letters 128 (11), 114801, 2022
332022
Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr3SnO
Y Ma, A Edgeton, H Paik, BD Faeth, CT Parzyck, B Pamuk, SL Shang, ...
Advanced Materials 32 (34), 2000809, 2020
242020
Interfacial charge transfer and persistent metallicity of ultrathin SrIrO3/SrRuO3 heterostructures
JN Nelson, NJ Schreiber, AB Georgescu, BH Goodge, BD Faeth, ...
Science Advances 8 (5), eabj0481, 2022
152022
Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer
BD Faeth, S Xie, S Yang, JK Kawasaki, JN Nelson, S Zhang, C Parzyck, ...
Physical review letters 127 (1), 016803, 2021
152021
Mott gap collapse in lightly hole-doped Sr2−xKxIrO4
JN Nelson, CT Parzyck, BD Faeth, JK Kawasaki, DG Schlom, KM Shen
Nature Communications 11 (1), 2597, 2020
152020
Strong interlayer interactions in bilayer and trilayer moiré superlattices
S Xie, BD Faeth, Y Tang, L Li, E Gerber, CT Parzyck, D Chowdhury, ...
Science advances 8 (12), eabk1911, 2022
142022
Canonical approach to cation flux calibration in oxide molecular-beam epitaxy
J Sun, CT Parzyck, JH Lee, CM Brooks, LF Kourkoutis, X Ke, R Misra, ...
Physical Review Materials 6 (3), 033802, 2022
132022
Stress relaxation in quasi-two-dimensional self-assembled nanoparticle monolayers
LS Boucheron, JT Stanley, Y Dai, SS You, CT Parzyck, S Narayanan, ...
Physical Review E 97 (5), 052803, 2018
102018
Absence of 3a0 charge density wave order in the infinite-layer nickelate NdNiO2
CT Parzyck, NK Gupta, Y Wu, V Anil, L Bhatt, M Bouliane, R Gong, ...
Nature materials, 1-6, 2024
92024
Coarse spectral characterization of warm x-rays at the Z facility using a filtered thermoluminescent dosimeter array
VJ Harper-Slaboszewicz, BA Ulmen, CT Parzyck, DJ Ampleford, ...
Review of Scientific Instruments 88 (4), 2017
92017
Direct observation of distinct minibands in moir\'e superlattices
S Xie, BD Faeth, Y Tang, L Li, CT Parzyck, D Chowdhury, YH Zhang, ...
arXiv preprint arXiv:2010.07806, 2020
62020
Synthesis of thin film infinite-layer nickelates by atomic hydrogen reduction: clarifying the role of the capping layer
CT Parzyck, V Anil, Y Wu, BH Goodge, M Roddy, LF Kourkoutis, ...
arXiv preprint arXiv:2401.07129, 2024
32024
Computational synthesis of substrates by crystal cleavage
JT Paul, A Galdi, C Parzyck, K M. Shen, J Maxson, RG Hennig
npj Computational Materials 7 (1), 147, 2021
32021
Enhanced surface superconductivity in Ba (Fe0. 95Co0. 05) 2As2
CT Parzyck, BD Faeth, GN Tam, GR Stewart, KM Shen
Applied Physics Letters 116 (6), 2020
32020
Growth of PdCoO2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy
Q Song, J Sun, CT Parzyck, L Miao, Q Xu, FVE Hensling, MR Barone, ...
APL Materials 10 (9), 2022
22022
Understanding the growth dynamics Cs-Sb thin films via in-situ characterization techniques: Towards epitaxial alkali antimonide photocathodes
A Galdi, CT Parzyck, WJI DeBenedetti, J Balajka, L Cultrera, IV Bazarov, ...
Quantum 10, 4, 2021
22021
Low energy photoemission from (100) Ba1−xLaxSnO3 thin films for photocathode applications
A Galdi, CM Pierce, L Cultrera, G Adhikari, WA Schroeder, H Paik, ...
The European Physical Journal Special Topics 228, 713-718, 2019
22019
Atomically smooth films of CsSb: A chemically robust visible light photocathode
CT Parzyck, CA Pennington, WJI DeBenedetti, J Balajka, EM Echeverria, ...
APL Materials 11 (10), 2023
12023
CORRELATED ORBITALS YIELD HIGH-MOBILITY, BACK-END-OF-LINE COMPATIBLE P-TYPE OXIDE SEMICONDUCTOR
DG Schlom, J Sun, J Park, K Shen, C Parzyck
US Patent App. 18/068,568, 2024
2024
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