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Oliver D Patterson
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Cited by
Year
Pseudo-resonant full bridge DC/DC converter
OD Patterson, DM Divan
IEEE Transactions on Power Electronics 6 (4), 671-678, 1991
4361991
Semiconductor integrated test structures for electron beam inspection of semiconductor wafers
MC Sun, S Jansen, R Mann, OD Patterson
US Patent 7,679,083, 2010
1232010
Detection of resistive shorts and opens using voltage contrast inspection
OD Patterson, H Wildman, D Gal, K Wu
The 17th Annual SEMI/IEEE ASMC 2006 Conference, 327-333, 2006
1162006
Voltage contrast inspection of deep trench isolation
N Arnold, J Liu, BW Messenger, OD Patterson
US Patent 8,927,989, 2015
1042015
Buried short location determination using voltage contrast inspection
OD Patterson, HS Wildman
US Patent 7,474,107, 2009
1032009
E-beam inspection for detection of sub-design rule physical defects
OD Patterson, J Lee, C Lei, D Salvador
2012 SEMI Advanced Semiconductor Manufacturing Conference, 383-387, 2012
1002012
Early detection of systematic patterning problems for a 22nm SOI technology using E-beam hot spot inspection
OD Patterson, DA Ryan, MD Monkowski, D Nguyen-ngoc, B Morgenfeld, ...
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference, 295-300, 2013
992013
Grounding front-end-of-line structures on a SOI substrate
WJ Cote, OD Patterson
US Patent 7,518,190, 2009
982009
Early detection of electrical defects in deep trench capacitors using voltage contrast inspection
B Donovan, OD Patterson, W Chang, N Arnold, B Messenger, OJ Kwon, ...
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference, 301-306, 2013
972013
Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection
OD Patterson, HS Wildman, M Sun
US Patent 7,772,866, 2010
972010
Characterization of contact module failure mechanisms for SOI technology using E-beam inspection and in-line TEM
XJ Zhou, OD Patterson, W Lee, HH Kang, R Hahn
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 270-276, 2010
972010
Test structure for resistive open detection using voltage contrast inspection and related methods
I Ahsan, MB Ketchen, K McStay, OD Patterson
US Patent 7,733,109, 2010
942010
Varying capacitance voltage contrast structures to determine defect resistance
C Lavoie, CE Murray, OD Patterson, RL Wisnieff
US Patent 7,927,895, 2011
932011
Test structures and method of defect detection using voltage contrast inspection
OD Patterson, H Zhu
US Patent 7,456,636, 2008
922008
Test Structure and e-Beam Inspection Methodology for In-line Detection of (Non-visual) Missing Spacer Defects
OD Patterson, K Wu, D Mocuta, K Nafisi
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 48-53, 2007
912007
In-line process window monitoring using voltage contrast inspection
OD Patterson, HH Kang, K Wu, P Feichtinger
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 19-24, 2008
902008
Enhancement of voltage contrast inspection signal using scan direction
OD Patterson, V Lee, FY Zhao
2007 International Symposium on Semiconductor Manufacturing, 1-4, 2007
902007
Test structure for detection of gap in conductive layer of multilayer gate stack
RT Mo, OD Patterson, X Zhou
US Patent 8,399,266, 2013
872013
Methodology for trench capacitor etch optimization using voltage contrast inspection and special processing
OD Patterson, XJ Zhou, RS Takalkar, KV Hawkins, EH Beckmann, ...
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 109-114, 2010
872010
In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection
E Solecky, OD Patterson, A Stamper, E McLellan, R Buengener, A Vaid, ...
Metrology, Inspection, and Process Control for Microlithography XXVII 8681 …, 2013
862013
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