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Hongjian Li
Hongjian Li
Solid State Lighting & Energy Electronics Center, UCSB
Verified email at ucsb.edu - Homepage
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Cited by
Year
Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication
M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ...
Nano Energy 67, 104236, 2020
602020
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
H Li, J Kang, P Li, J Ma, H Wang, M Liang, Z Li, J Li, X Yi, G Wang
Applied Physics Letters 102 (1), 2013
562013
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Z Li, J Kang, B Wei Wang, H Li, Y Hsiang Weng, YC Lee, Z Liu, X Yi, ...
Journal of Applied Physics 115 (8), 2014
552014
Efficient semipolar (11–22) 550 nm yellow/green ingan light-emitting diodes on low defect density (11–22) GaN/sapphire templates
H Li, M Khoury, B Bonef, AI Alhassan, AJ Mughal, E Azimah, ...
ACS applied materials & interfaces 9 (41), 36417-36422, 2017
532017
Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well
H Li, P Li, J Kang, Z Li, Y Zhang, Z Li, J Li, X Yi, J Li, G Wang
Applied Physics Express 6 (5), 052102, 2013
532013
Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ...
Applied Physics Letters 119 (8), 2021
512021
Phosphor-free, color-tunable monolithic InGaN light-emitting diodes
H Li, P Li, J Kang, Z Li, Z Li, J Li, X Yi, G Wang
Applied Physics Express 6 (10), 102103, 2013
512013
Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ...
Optics Express 27 (17), 24154-24160, 2019
482019
Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
P Li, H Li, H Zhang, Y Yang, MS Wong, C Lynsky, M Iza, MJ Gordon, ...
Applied Physics Letters 120 (12), 2022
422022
Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD
PP Li, YB Zhao, HJ Li, JM Che, ZH Zhang, ZC Li, YY Zhang, LC Wang, ...
Optics Express 26 (25), 33108-33115, 2018
412018
Sandwich method to grow high quality AlN by MOCVD
I Demir, H Li, Y Robin, R McClintock, S Elagoz, M Razeghi
Journal of Physics D: Applied Physics 51 (8), 085104, 2018
402018
Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer
J Kang, H Li, Z Li, Z Liu, P Ma, X Yi, G Wang
Applied Physics Letters 103 (10), 2013
352013
InGaN-based microLED devices approaching 1% EQE with red 609 nm electroluminescence on semi-relaxed substrates
RC White, H Li, M Khoury, C Lynsky, M Iza, S Keller, D Sotta, S Nakamura, ...
Crystals 11 (11), 1364, 2021
322021
Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition
P Li, H Zhang, H Li, M Iza, Y Yao, MS Wong, N Palmquist, JS Speck, ...
Optics Express 28 (13), 18707-18712, 2020
322020
Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage
P Li, H Zhang, H Li, Y Zhang, Y Yao, N Palmquist, M Iza, JS Speck, ...
Semiconductor Science and Technology 35 (12), 125023, 2020
302020
Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization
H Li, P Li, J Kang, Z Li, Y Zhang, M Liang, Z Li, J Li, X Yi, G Wang
Applied Physics Express 6 (9), 092101, 2013
272013
Progress of InGaN-based red micro-light emitting diodes
P Li, H Li, MS Wong, P Chan, Y Yang, H Zhang, M Iza, JS Speck, ...
Crystals 12 (4), 541, 2022
242022
High-temperature electroluminescence properties of InGaN red 40× 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
P Li, A David, H Li, H Zhang, C Lynsky, Y Yang, M Iza, JS Speck, ...
Applied Physics Letters 119 (23), 2021
242021
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
H Li, P Li, J Kang, J Ding, J Ma, Y Zhang, X Yi, G Wang
Scientific Reports 6 (1), 35217, 2016
242016
Pyramid array InGaN/GaN core–shell light emitting diodes with homogeneous multilayer graphene electrodes
J Kang, Z Li, H Li, Z Liu, X Li, X Yi, P Ma, H Zhu, G Wang
Applied Physics Express 6 (7), 072102, 2013
232013
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Articles 1–20