Hongjian Li
Hongjian Li
Solid State Lighting & Energy Electronics Center, UCSB
Verified email at - Homepage
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Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Z Li, J Kang, B Wei Wang, H Li, Y Hsiang Weng, YC Lee, Z Liu, X Yi, ...
Journal of Applied Physics 115 (8), 083112, 2014
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
H Li, J Kang, P Li, J Ma, H Wang, M Liang, Z Li, J Li, X Yi, G Wang
Applied Physics Letters 102 (1), 011105, 2013
Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well
H Li, P Li, J Kang, Z Li, Y Zhang, Z Li, J Li, X Yi, J Li, G Wang
Applied Physics Express 6 (5), 052102, 2013
Phosphor-free, color-tunable monolithic InGaN light-emitting diodes
H Li, P Li, J Kang, Z Li, Z Li, J Li, X Yi, G Wang
Applied Physics Express 6 (10), 102103, 2013
Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication
M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ...
Nano Energy 67, 104236, 2020
Efficient semipolar (11–22) 550 nm yellow/green ingan light-emitting diodes on low defect density (11–22) GaN/sapphire templates
H Li, M Khoury, B Bonef, AI Alhassan, AJ Mughal, E Azimah, ...
ACS applied materials & interfaces 9 (41), 36417-36422, 2017
Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ...
Optics Express 27 (17), 24154-24160, 2019
Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer
J Kang, H Li, Z Li, Z Liu, P Ma, X Yi, G Wang
Applied Physics Letters 103 (10), 102104, 2013
Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD
PP Li, YB Zhao, HJ Li, JM Che, ZH Zhang, ZC Li, YY Zhang, LC Wang, ...
Optics Express 26 (25), 33108-33115, 2018
Sandwich method to grow high quality AlN by MOCVD
I Demir, H Li, Y Robin, R McClintock, S Elagoz, M Razeghi
Journal of Physics D: Applied Physics 51 (8), 085104, 2018
Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization
H Li, P Li, J Kang, Z Li, Y Zhang, M Liang, Z Li, J Li, X Yi, G Wang
Applied Physics Express 6 (9), 092101, 2013
Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition
P Li, H Zhang, H Li, M Iza, Y Yao, MS Wong, N Palmquist, JS Speck, ...
Optics Express 28 (13), 18707-18712, 2020
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
H Li, P Li, J Kang, J Ding, J Ma, Y Zhang, X Yi, G Wang
Scientific Reports 6 (1), 1-7, 2016
Pyramid array InGaN/GaN core–shell light emitting diodes with homogeneous multilayer graphene electrodes
J Kang, Z Li, H Li, Z Liu, X Li, X Yi, P Ma, H Zhu, G Wang
Applied Physics Express 6 (7), 072102, 2013
Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage
P Li, H Zhang, H Li, Y Zhang, Y Yao, N Palmquist, M Iza, JS Speck, ...
Semiconductor Science and Technology 35 (12), 125023, 2020
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
P Li, H Li, Z Li, J Kang, X Yi, J Li, G Wang
Journal of Applied Physics 117 (7), 073101, 2015
Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography
L Wang, Z Liu, Z Li, Y Zhang, H Li, X Yi, J Wang, G Wang, J Li
Nanoscale 9 (21), 7021-7026, 2017
Demonstration of electrically injected semipolar laser diodes grown on low-cost and scalable sapphire substrates
M Khoury, H Li, H Zhang, B Bonef, MS Wong, F Wu, D Cohen, P De Mierry, ...
ACS applied materials & interfaces 11 (50), 47106-47111, 2019
Low threading dislocation density in GaN films grown on patterned sapphire substrates
M Liang, G Wang, H Li, Z Li, R Yao, B Wang, P Li, J Li, X Yi, J Wang, J Li
Journal of Semiconductors 33 (11), 113002, 2012
Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ...
Applied Physics Letters 119 (8), 081102, 2021
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