| The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si Z Çaldıran, AR Deniz, Ş Aydoğan, A Yesildag, D Ekinci Superlattices and Microstructures 56, 45-54, 2013 | 71 | 2013 |
| Space charge limited current mechanism (SCLC) in the graphene oxide–Fe3O4 nanocomposites/n-Si heterojunctions Z Çaldıran, M Şinoforoğlu, Ö Metin, Ş Aydoğan, K Meral Journal of Alloys and Compounds 631, 261-265, 2015 | 65 | 2015 |
| A facile growth of spray based ZnO films and device performance investigation for Schottky diodes: determination of interface state density distribution Ş Aydoğan, ML Grilli, M Yilmaz, Z Çaldiran, H Kaçuş Journal of Alloys and Compounds 708, 55-66, 2017 | 52 | 2017 |
| Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature A Kocyigit, I Orak, Z Çaldıran, A Turut Journal of Materials Science: Materials in Electronics 28, 17177-17184, 2017 | 49 | 2017 |
| I–V–T (current–voltage–temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device Z Çaldıran, AR Deniz, FM Coşkun, Ş Aydoğan, A Yeşildağ, D Ekinci Journal of alloys and compounds 584, 652-657, 2014 | 46 | 2014 |
| Preparation and characterization of sol–gel-derived n-ZnO thin film for Schottky diode application M Yilmaz, Z Caldiran, AR Deniz, S Aydogan, R Gunturkun, A Turut Applied Physics A 119, 547-552, 2015 | 41 | 2015 |
| Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure Z Çaldıran Journal of Alloys and Compounds 865, 158856, 2021 | 38 | 2021 |
| The electrical characteristics of the Fe3O4/Si junctions Z Çaldıran, AR Deniz, Y Şahin, Ö Metin, K Meral, Ş Aydoğan Journal of alloys and compounds 552, 437-442, 2013 | 36 | 2013 |
| The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range AR Deniz, Z Çaldıran, Ö Metin, K Meral, Ş Aydoğan Journal of colloid and interface science 473, 172-181, 2016 | 35 | 2016 |
| Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range Z Çaldıran Journal of Alloys and Compounds 816, 152601, 2020 | 34 | 2020 |
| Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique A Kocyigit, I Orak, Ş Aydoğan, Z Çaldıran, A Turut Journal of Materials Science: Materials in Electronics 28, 5880-5886, 2017 | 30 | 2017 |
| Synthesis and characterization of reduced graphene oxide/rhodamine 101 (rGO-Rh101) nanocomposites and their heterojunction performance in rGO-Rh101/p-Si device configuration GG Batır, M Arık, Z Caldıran, A Turut, S Aydogan Journal of Electronic Materials 47, 329-336, 2018 | 29 | 2018 |
| Improving the performance of the organic solar cell and the inorganic heterojunction devices using monodisperse Fe3O4 nanoparticles Z Çaldıran, M Biber, Ö Metin, Ş Aydoğan Optik 142, 134-143, 2017 | 25 | 2017 |
| Effects of the PENTACENE as doping material on the power conversion efficiency of P3HT: PCBM based ternary organic solar cells Z Çaldıran, Ü Erkem, A Baltakesmez, M Biber Physica B: Condensed Matter 607, 412859, 2021 | 23 | 2021 |
| Synthesis of CuO–graphene nanocomposite material and the effect of gamma radiation on CuO–graphene/p-Si junction diode Z Orhan, E Cinan, Z Çaldıran, Y Kurucu, E Daş Journal of Materials Science: Materials in Electronics 31, 12715-12724, 2020 | 23 | 2020 |
| The Synthesis of the Fe3O4 Nanoparticles and the Analysis of the Current–Voltage Measurements on Au/Fe3O4/p-Si Schottky Contacts in a Wide Temperature … AR Deniz, Z Çaldıran, Y Şahin, M Şinoforoğlu, Ö Metin, K Meral, ... Metallurgical and Materials Transactions A 44, 3809-3814, 2013 | 22 | 2013 |
| The influence of annealing temperature and time on the efficiency of pentacene: PTCDI organic solar cells M Biber, Ş Aydoğan, Z Çaldıran, B Çakmak, T Karacalı, A Türüt Results in physics 7, 3444-3448, 2017 | 21 | 2017 |
| Electrochemical growth of GaTe onto the p-type Si substrate and the characterization of the Sn/GaTe Schottky diode as a function of temperature K Çınar, Z Çaldıran, C Coşkun, Ş Aydoğan Thin Solid Films 550, 40-45, 2014 | 20 | 2014 |
| The synthesis of SrTiO3 nanocubes and the analysis of nearly ideal diode application of Ni/SrTiO3 nanocubes/n-Si heterojunctions LB Taşyürek, M Sevim, Z Çaldıran, S Aydogan, Ö Metin Materials Research Express 5 (1), 015060, 2018 | 18 | 2018 |
| The role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on temperature Z Çaldıran, LB Taşyürek Sensors and Actuators A: Physical 328, 112765, 2021 | 16 | 2021 |
